We describe theoretically the grounded method of measuring the conductivity of anisotropic layered semiconductor materials. The suggested method implies the use of a four-probe testing device with a linear arrangement...We describe theoretically the grounded method of measuring the conductivity of anisotropic layered semiconductor materials. The suggested method implies the use of a four-probe testing device with a linear arrangement of probes. The final expressions for identifying the electrical conductivity are presented in the form of a series of analytic functions. The suggested method is experimentally verified, and practical recommendations of how to apply it are also provided.展开更多
The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the ...The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the finite-difference timedomain method,which is used to directly solve Maxwell＇s equations,can consider the lateral variation of the refractive index and obtain an accurate convergence effect.The simulation results show that e-rays and o-rays bend in different directions when the in-plane switching blue phase liquid crystal display is driven by the operating voltage.The finitedifference time-domain method should be used when the distribution of the liquid crystal in the liquid crystal display has a large lateral change.展开更多
A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest gra...A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.展开更多
We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions....We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions.Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure.The experimentally determined direct band gap is 1.39 eV,consistent with the value of the density function theory calculations.Our results reveal that Mg_(3)Si_(2)Te_(6)is a direct gap semiconductor,which is a potential candidate for near-infrared optoelectronic devices.展开更多
We report the modulational instability （MI） analysis for the modulation equations governing the propagation of coherent polarized light through a nematic liquid crystal （NLC） slab, in the limit of low light intens...We report the modulational instability （MI） analysis for the modulation equations governing the propagation of coherent polarized light through a nematic liquid crystal （NLC） slab, in the limit of low light intensity and local material response. The linear stability analysis of the nonlinear plane wave solutions is performed by considering both the wave vectors （k,l） of the basic states and wave vectors （K,L） of the perturbations as free parameters. We compute the MI gain, and the MI gain peak is reduced and the stable bandwidth is widened with the increase of the strength of the applied electric field. Further, we invoke the extended homogeneous balance method and Exp-function method aided with symbolic computation and obtain a series of periodic solitonic humps of nematicon profiles admitting the propagation of laser light in the NLC medium.展开更多
We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, hig...We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.展开更多
基金Supported by the Ministry of Education and Science of the Russian Federation under Grant No 2271
文摘We describe theoretically the grounded method of measuring the conductivity of anisotropic layered semiconductor materials. The suggested method implies the use of a four-probe testing device with a linear arrangement of probes. The final expressions for identifying the electrical conductivity are presented in the form of a series of analytic functions. The suggested method is experimentally verified, and practical recommendations of how to apply it are also provided.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11304074,61475042,and 11274088)the Natural Science Foundation of Hebei Province,China(Grant Nos.A2015202320 and GCC2014048)the Key Subject Construction Project of Hebei Province University,China
文摘The finite-difference time-domain method is used to simulate the optical characteristics of an in-plane switching blue phase liquid crystal display.Compared with the matrix optic methods and the refractive method,the finite-difference timedomain method,which is used to directly solve Maxwell＇s equations,can consider the lateral variation of the refractive index and obtain an accurate convergence effect.The simulation results show that e-rays and o-rays bend in different directions when the in-plane switching blue phase liquid crystal display is driven by the operating voltage.The finitedifference time-domain method should be used when the distribution of the liquid crystal in the liquid crystal display has a large lateral change.
基金This work was supported by the Guangdong Provincial Natural Science Foundation of China No.990781.
文摘A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.
基金the National Natural Science Foundation of China(Grant Nos.12174454,11904414,11904416,and 12104427)the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2021B1515120015)+1 种基金the Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011123)the National Key Research and Development Program of China(Grant No.2019YFA0705702).
文摘We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions.Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure.The experimentally determined direct band gap is 1.39 eV,consistent with the value of the density function theory calculations.Our results reveal that Mg_(3)Si_(2)Te_(6)is a direct gap semiconductor,which is a potential candidate for near-infrared optoelectronic devices.
基金One of the authors (L. Kavitha) gratefully acknowledges the financial support from NBHM, India in the form of major research project, BRNS, India in the form of Young Scientist Research Award and ICTP, Italy in the form of Junior AssociateshipUGC, India for financial assistance in the form of Research Award+1 种基金M. Venkatesh acknowledges BSR-Research Fellowship under UGC Non-SAP Scheme, IndiaS. Dhamayanthi thanks the University Research Fellowship (URF) given by Periyar Uni- versity, India.
文摘We report the modulational instability （MI） analysis for the modulation equations governing the propagation of coherent polarized light through a nematic liquid crystal （NLC） slab, in the limit of low light intensity and local material response. The linear stability analysis of the nonlinear plane wave solutions is performed by considering both the wave vectors （k,l） of the basic states and wave vectors （K,L） of the perturbations as free parameters. We compute the MI gain, and the MI gain peak is reduced and the stable bandwidth is widened with the increase of the strength of the applied electric field. Further, we invoke the extended homogeneous balance method and Exp-function method aided with symbolic computation and obtain a series of periodic solitonic humps of nematicon profiles admitting the propagation of laser light in the NLC medium.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11190022,11334010 and 11534007the National Basic Research Program of China under Grant No 2015CB921000the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020300
文摘We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.
