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Effect of CoSi_2 buffer layer on structure and magnetic properties of Co films grown on Si(001) substrate
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作者 胡泊 何为 +4 位作者 叶军 汤进 Syed Sheraz Ahmad 张向群 成昭华 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第1期484-488,共5页
Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si(001) substrates. In order to investi... Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si(001) substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope(STM), low energy electron diffraction(LEED), high resolution transmission electron microscopy(HRTEM), and surface magneto-optical Kerr effect(SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic(001) films. 展开更多
关键词 magnetic anisotropy co si2 buffer layers four-fold symmetry
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