An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface ...An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface terminals respectively.The chain-length of alkane exceeds the bond-length of surface functionalities T(x=O,-OH,-F)so as to introduce intra-flake and inter-flake strains into Ti_(3)C_(2)T_(x)MXene.The electronic microscopy(TEM/AFM)shows obvious edge-fold and tensile/compressive deformation of flake.The alkane termination increases the intrinsic absorbance of Ti_(3)C_(2)T_(x)MXene from no more than 50%up to more than 99%in the mid-wavelength in⁃frared region from 2.5μm to 4.5μm.Such an absorption enhancement attributes to the reduce of infrared reflec⁃tance of Ti_(3)C_(2)T_(x)MXene.The C-H bond skeleton vibration covers the aforementioned region and partially reduces the surface reflectance.Meanwhile,the flake deformation owing to edge-fold and tensile/compression increases the specific surface area so as to increase the absorption as well.These results have applicable value in the area of mid-infrared camouflage.展开更多
对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光...对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。展开更多
文摘An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface terminals respectively.The chain-length of alkane exceeds the bond-length of surface functionalities T(x=O,-OH,-F)so as to introduce intra-flake and inter-flake strains into Ti_(3)C_(2)T_(x)MXene.The electronic microscopy(TEM/AFM)shows obvious edge-fold and tensile/compressive deformation of flake.The alkane termination increases the intrinsic absorbance of Ti_(3)C_(2)T_(x)MXene from no more than 50%up to more than 99%in the mid-wavelength in⁃frared region from 2.5μm to 4.5μm.Such an absorption enhancement attributes to the reduce of infrared reflec⁃tance of Ti_(3)C_(2)T_(x)MXene.The C-H bond skeleton vibration covers the aforementioned region and partially reduces the surface reflectance.Meanwhile,the flake deformation owing to edge-fold and tensile/compression increases the specific surface area so as to increase the absorption as well.These results have applicable value in the area of mid-infrared camouflage.
文摘对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。
