We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires ...We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-periodic Coulomb blockade at zero magnetic field,a necessary step for future Majorana experiments.By reducing wire diameter,our work presents a promising route for reaching fewer sub-band regime in Major ana nanowire devices.展开更多
We study a gate-tunable superconducting qubit(gatemon) based on a thin InAs-Al hybrid nanowire.Using a gate voltage to control its Josephson energy,the gatemon can reach the strong coupling regime to a microwave cavit...We study a gate-tunable superconducting qubit(gatemon) based on a thin InAs-Al hybrid nanowire.Using a gate voltage to control its Josephson energy,the gatemon can reach the strong coupling regime to a microwave cavity.In the dispersive regime,we extract the energy relaxation time T_(1)~0.56 μs and the dephasing time T_(2)^(*)~0.38 μs.Since thin In As-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks,our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.92065106,61974138,12104053,and 11704364)the Beijing Natural Science Foundation(Grant No.1192017)+2 种基金Tsinghua University Initiative Scientifc Research Programthe support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.Y2021043)China Postdoctoral Science Foundation(Grant Nos.2020M670173 and 2020T130058)。
文摘We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-periodic Coulomb blockade at zero magnetic field,a necessary step for future Majorana experiments.By reducing wire diameter,our work presents a promising route for reaching fewer sub-band regime in Major ana nanowire devices.
基金supported by the Tsinghua University Initiative Scientific Research Programthe Alibaba Innovative Research Program+1 种基金the National Natural Science Foundation of China (Grant Nos.12204047,92065106,and 61974138)the support from Youth Innovation Promotion Association,Chinese Academy of Sciences (Grant Nos.2017156 and Y2021043)。
文摘We study a gate-tunable superconducting qubit(gatemon) based on a thin InAs-Al hybrid nanowire.Using a gate voltage to control its Josephson energy,the gatemon can reach the strong coupling regime to a microwave cavity.In the dispersive regime,we extract the energy relaxation time T_(1)~0.56 μs and the dephasing time T_(2)^(*)~0.38 μs.Since thin In As-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks,our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
