As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such ...As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such as lower photoluminescence quantum yield(PLQY),complex synthetic pathways,uncontrollable emission spectra,and insufficient photostability.In this study,CuInZnS@ZnS core/shell QDs was prepared via a one-pot/three-step synthetic scheme with accurate and tunable control of PL spectra.Then their ensemble spectroscopic properties during nucleation formation,alloying,and ZnS shell growth processes were systematically investigated.PL peaks of these QDs can be precisely manipulated from 530 to 850 nm by controlling the stoichiometric ratio of Cu/In,Zn^(2+)doping and ZnS shell growth.In particular,CuInZnS@ZnS QDs possess a significantly long emission lifetime(up to 750 ns),high PLQY(up to 85%),and excellent crystallinity.Their spectroscopic evolution is well validated by Cu-deficient related intragap emission model.By controlling the stoichiometric ratio of Cu/In,two distinct Cu-deficient related emission pathways are established based on the differing oxidation states of Cu defects.Therefore,this work provides deeper insights for fabricating high luminescent ternary or quaternary-alloyed QDs.展开更多
为研究城市轨道交通轨地过渡电阻对杂散电流的影响,基于电阻网络的方法,建立将各金属结构、道床及大地等效成电阻和过渡电阻的电路模型,并推导出各金属结构电压、电流的解析表达式。然后采用CDEGS软件作了仿真验证,讨论了不同过渡电阻...为研究城市轨道交通轨地过渡电阻对杂散电流的影响,基于电阻网络的方法,建立将各金属结构、道床及大地等效成电阻和过渡电阻的电路模型,并推导出各金属结构电压、电流的解析表达式。然后采用CDEGS软件作了仿真验证,讨论了不同过渡电阻及区间过渡电阻不均匀对杂散电流和走行轨电位的影响。研究结果表明：过渡电阻均匀和不均匀时,仿真结果均与计算值基本保持一致;过渡电阻均匀时,排流网电位最大偏差为5.7 m V,不超过16%;轨地过渡电阻与走行轨绝缘电阻率成正比,杂散电流大小与过渡电阻成反比,过渡电阻为3？·km时,杂散电流达到1 448.4 m A;不均匀过渡电阻并不会影响走行轨上的压降,但会改变其电位分布;过渡电阻突变减小会增大总杂散电流。研究成果可为地铁杂散电流防护设计提供依据。展开更多
基金Fund Project for Transformation of Scientific and Technological Achievements of Jiangsu Province of China(BA2023020)。
文摘As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such as lower photoluminescence quantum yield(PLQY),complex synthetic pathways,uncontrollable emission spectra,and insufficient photostability.In this study,CuInZnS@ZnS core/shell QDs was prepared via a one-pot/three-step synthetic scheme with accurate and tunable control of PL spectra.Then their ensemble spectroscopic properties during nucleation formation,alloying,and ZnS shell growth processes were systematically investigated.PL peaks of these QDs can be precisely manipulated from 530 to 850 nm by controlling the stoichiometric ratio of Cu/In,Zn^(2+)doping and ZnS shell growth.In particular,CuInZnS@ZnS QDs possess a significantly long emission lifetime(up to 750 ns),high PLQY(up to 85%),and excellent crystallinity.Their spectroscopic evolution is well validated by Cu-deficient related intragap emission model.By controlling the stoichiometric ratio of Cu/In,two distinct Cu-deficient related emission pathways are established based on the differing oxidation states of Cu defects.Therefore,this work provides deeper insights for fabricating high luminescent ternary or quaternary-alloyed QDs.
文摘为研究城市轨道交通轨地过渡电阻对杂散电流的影响,基于电阻网络的方法,建立将各金属结构、道床及大地等效成电阻和过渡电阻的电路模型,并推导出各金属结构电压、电流的解析表达式。然后采用CDEGS软件作了仿真验证,讨论了不同过渡电阻及区间过渡电阻不均匀对杂散电流和走行轨电位的影响。研究结果表明：过渡电阻均匀和不均匀时,仿真结果均与计算值基本保持一致;过渡电阻均匀时,排流网电位最大偏差为5.7 m V,不超过16%;轨地过渡电阻与走行轨绝缘电阻率成正比,杂散电流大小与过渡电阻成反比,过渡电阻为3？·km时,杂散电流达到1 448.4 m A;不均匀过渡电阻并不会影响走行轨上的压降,但会改变其电位分布;过渡电阻突变减小会增大总杂散电流。研究成果可为地铁杂散电流防护设计提供依据。
