The role of the oxygen in AlGaN/GaN high electron mobility transistors(HEMTs)before and after semi-on state stress was discussed.Comparing with the electrical characteristics of the devices in vacuum,air,and oxygen at...The role of the oxygen in AlGaN/GaN high electron mobility transistors(HEMTs)before and after semi-on state stress was discussed.Comparing with the electrical characteristics of the devices in vacuum,air,and oxygen atmosphere,it is revealed that the oxygen has significant influence on the electric characteristics and the hot-carrier-stress-induced degradation of the device.Comparing with the situation in vacuum,the gate leakage increased an order of magnitude in oxygen and air atmosphere.Double gate structure was used to separate the barrier leakage and surface leakage of AlGaN/GaN HEMT it is found that surface leakage is the major influencing factor in gate leakage of SiN-passivated devices before and after semi-on state stress.During semi-on state stress in the oxygen atmosphere,the electric-field-driven oxidation process promoted the oxidation of the nitride layer,and the oxidation layer in the SiN/AlGaN interface leads to the decreasing of the surface leakage.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.62104167)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20210863 and BK20180966)by Qing Lan Project of Jiangsu Province,China.
文摘The role of the oxygen in AlGaN/GaN high electron mobility transistors(HEMTs)before and after semi-on state stress was discussed.Comparing with the electrical characteristics of the devices in vacuum,air,and oxygen atmosphere,it is revealed that the oxygen has significant influence on the electric characteristics and the hot-carrier-stress-induced degradation of the device.Comparing with the situation in vacuum,the gate leakage increased an order of magnitude in oxygen and air atmosphere.Double gate structure was used to separate the barrier leakage and surface leakage of AlGaN/GaN HEMT it is found that surface leakage is the major influencing factor in gate leakage of SiN-passivated devices before and after semi-on state stress.During semi-on state stress in the oxygen atmosphere,the electric-field-driven oxidation process promoted the oxidation of the nitride layer,and the oxidation layer in the SiN/AlGaN interface leads to the decreasing of the surface leakage.
