Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zi...Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃at a constant zirconium flux rate of 0.01 ML/min,the polymorphic Inx Sey layer emerges on top of the insulating ZrSe2 layer.Different archetypes,such as InSe,α-In2Se3 and α-In2Se3,are found in the InxSey layers.A negative magnetoresistance of 40%at 2 K under 9 T magnetic field is observed.Such an InxSeyZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.展开更多
基金Supported by the National Natural Science Foundation of China(Grant No.11874233).
文摘Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃at a constant zirconium flux rate of 0.01 ML/min,the polymorphic Inx Sey layer emerges on top of the insulating ZrSe2 layer.Different archetypes,such as InSe,α-In2Se3 and α-In2Se3,are found in the InxSey layers.A negative magnetoresistance of 40%at 2 K under 9 T magnetic field is observed.Such an InxSeyZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.
