Based on core,logging,lab test and seismic data,sedimentary characteristics and pattern of marine hyperpycnal flow,the distribution rules of hyperpycnal flow reservoir,prediction method of favorable hyperpycnal flow r...Based on core,logging,lab test and seismic data,sedimentary characteristics and pattern of marine hyperpycnal flow,the distribution rules of hyperpycnal flow reservoir,prediction method of favorable hyperpycnal flow reservoir zones,hydrocarbon accumulation model in hyperpycnal flow reservoir in D block of Bay of Bengal were investigated,and the favorable exploration zone and well sites were predicted.Pliocene in D block has typical hyperpycnal flow sediment,which is a set of fine-medium sandstone held between thick layers of marine mudstone and features a series of reverse grading unit and normal grading unit pairs.The hyperpycnal flow sediment appears as heavily jagged box shape,bell shape and tongue shape facies on log curves with linear gradient,and corresponds to multiple phases of deep channels on the seismic section and high sinuous channel on stratal slices.The sedimentary bodies formed by a single phase hyperpycnal flow which include five types of microfacies,namely,supply channel(valley),channel complex,branch channel,levee and sheet sand.The hyperpycnal flow sediments appear in multiple branches,multiple generations and stages in space,forming high-quality reservoirs in strips on the plane and superposition vertically,with fairly good physical properties.The channel complex sandstone,with large thickness,coarse particle size and good physical properties,is the most favorable exploration facies.Based on the guidance of the sedimentary model,distribution of the channel complex microfacies was delineated in detail by seismic reflection structure analysis,spectrum waveform characteristic analysis,slice and attribute fusion,and combined with the structural feature analysis,the favorable drilling zone was sorted out,effectively guiding the exploration deployment of the block.展开更多
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
基金Supported by the CNPC Overseas Science and Technology Project(CNODC/CAL/KJZX/2015-016)
文摘Based on core,logging,lab test and seismic data,sedimentary characteristics and pattern of marine hyperpycnal flow,the distribution rules of hyperpycnal flow reservoir,prediction method of favorable hyperpycnal flow reservoir zones,hydrocarbon accumulation model in hyperpycnal flow reservoir in D block of Bay of Bengal were investigated,and the favorable exploration zone and well sites were predicted.Pliocene in D block has typical hyperpycnal flow sediment,which is a set of fine-medium sandstone held between thick layers of marine mudstone and features a series of reverse grading unit and normal grading unit pairs.The hyperpycnal flow sediment appears as heavily jagged box shape,bell shape and tongue shape facies on log curves with linear gradient,and corresponds to multiple phases of deep channels on the seismic section and high sinuous channel on stratal slices.The sedimentary bodies formed by a single phase hyperpycnal flow which include five types of microfacies,namely,supply channel(valley),channel complex,branch channel,levee and sheet sand.The hyperpycnal flow sediments appear in multiple branches,multiple generations and stages in space,forming high-quality reservoirs in strips on the plane and superposition vertically,with fairly good physical properties.The channel complex sandstone,with large thickness,coarse particle size and good physical properties,is the most favorable exploration facies.Based on the guidance of the sedimentary model,distribution of the channel complex microfacies was delineated in detail by seismic reflection structure analysis,spectrum waveform characteristic analysis,slice and attribute fusion,and combined with the structural feature analysis,the favorable drilling zone was sorted out,effectively guiding the exploration deployment of the block.
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
