The accepted doping ion in Ti^(4+)-site of PbZr_(y)Ti_(1–y)O_(3)(PZT)-based piezoelectric ceramics is a well-known method to increase mechanical quality factor(Q_(m)),since the acceptor coupled by oxygen vacancy beco...The accepted doping ion in Ti^(4+)-site of PbZr_(y)Ti_(1–y)O_(3)(PZT)-based piezoelectric ceramics is a well-known method to increase mechanical quality factor(Q_(m)),since the acceptor coupled by oxygen vacancy becomes defect dipole,which prevents the domain rotation.In this field,a serious problem is that generally,Qm decreases as the temperature(T)increases,since the oxygen vacancies are decoupled from the defect dipoles.In this work,Q_(m) of Pb_(0.95)Sr_(0.05)(Zr_(0.53)Ti_(0.47))O_(3)(PSZT)ceramics doped by 0.40%Fe_(2)O_(3)(in mole)abnormally increases as T increases,of which the Qm and piezoelectric coefficient(d_(33))at room temperature and Curie temperature(TC)are 507,292 pC/N,and 345℃,respectively.The maximum Qm of 824 was achieved in the range of 120–160℃,which is 62.52%higher than that at room temperature,while the dynamic piezoelectric constant(d_(31))was just slightly decreased by 3.85%.X-ray diffraction(XRD)and piezoresponse force microscopy results show that the interplanar spacing and the fine domains form as temperature increases,and the thermally stimulated depolarization current shows that the defect dipoles are stable even the temperature up to 240℃.It can be deduced that the aggregation of oxygen vacancies near the fine domains and defect dipole can be stable up to 240℃,which pins domain rotation,resulting in the enhanced Q_(m) with the increasing temperature.These results give a potential path to design high Q_(m) at high temperature.展开更多
铅基压电陶瓷因其优异的压电性能,被广泛应用于压电器件。其中,压电驱动器要求压电陶瓷具有较高压电性能并且在电场下具有较高的电致应变和较小的应变滞后。本研究通过施主-受主共掺,得到高压电性能和低电场应变滞后的PZT陶瓷。采用传...铅基压电陶瓷因其优异的压电性能,被广泛应用于压电器件。其中,压电驱动器要求压电陶瓷具有较高压电性能并且在电场下具有较高的电致应变和较小的应变滞后。本研究通过施主-受主共掺,得到高压电性能和低电场应变滞后的PZT陶瓷。采用传统固相反应法制备了(1-x)(Pb_(0.95)Sr_(0.05))(Zr_(53)Ti_(47))O_(3)-x BiAlO_(3)+0.2%MnO_(2)陶瓷(掺杂量为质量百分数),并对其微观结构和压电性能进行了研究。结果表明:BiAlO_(3)掺杂量较少时,陶瓷中缺陷偶极子的“钉扎”效应使得陶瓷畴壁转动困难,陶瓷压电性能较弱,应变滞后也较小。随BiAlO_(3)掺杂量增加,缺陷偶极子“钉扎”效应减弱,陶瓷的压电性能和应变滞后随之提高。本实验得到的性能最优组分为x=1.75%,该组份陶瓷的压电系数d_(33)=504 p C/N,机电耦合系数k_(p)=0.71,机械品质因数Q_(m)=281,居里温度T_(C)=312℃,在10k V/cm电场下的应变滞后仅为15%,并且还具有较好的温度稳定性,是一种具有应用价值的压电驱动器用压电陶瓷材料。展开更多
基金National Natural Science Foundation of China(U2241242)National Key R&D Program of China(2023YFB3812000,2021YFA0716502)。
文摘The accepted doping ion in Ti^(4+)-site of PbZr_(y)Ti_(1–y)O_(3)(PZT)-based piezoelectric ceramics is a well-known method to increase mechanical quality factor(Q_(m)),since the acceptor coupled by oxygen vacancy becomes defect dipole,which prevents the domain rotation.In this field,a serious problem is that generally,Qm decreases as the temperature(T)increases,since the oxygen vacancies are decoupled from the defect dipoles.In this work,Q_(m) of Pb_(0.95)Sr_(0.05)(Zr_(0.53)Ti_(0.47))O_(3)(PSZT)ceramics doped by 0.40%Fe_(2)O_(3)(in mole)abnormally increases as T increases,of which the Qm and piezoelectric coefficient(d_(33))at room temperature and Curie temperature(TC)are 507,292 pC/N,and 345℃,respectively.The maximum Qm of 824 was achieved in the range of 120–160℃,which is 62.52%higher than that at room temperature,while the dynamic piezoelectric constant(d_(31))was just slightly decreased by 3.85%.X-ray diffraction(XRD)and piezoresponse force microscopy results show that the interplanar spacing and the fine domains form as temperature increases,and the thermally stimulated depolarization current shows that the defect dipoles are stable even the temperature up to 240℃.It can be deduced that the aggregation of oxygen vacancies near the fine domains and defect dipole can be stable up to 240℃,which pins domain rotation,resulting in the enhanced Q_(m) with the increasing temperature.These results give a potential path to design high Q_(m) at high temperature.
基金National Natural Science Foundation of China(51831010)National Key R&D Program(2021YFA0716502,2021YFB3800604)。
文摘铅基压电陶瓷因其优异的压电性能,被广泛应用于压电器件。其中,压电驱动器要求压电陶瓷具有较高压电性能并且在电场下具有较高的电致应变和较小的应变滞后。本研究通过施主-受主共掺,得到高压电性能和低电场应变滞后的PZT陶瓷。采用传统固相反应法制备了(1-x)(Pb_(0.95)Sr_(0.05))(Zr_(53)Ti_(47))O_(3)-x BiAlO_(3)+0.2%MnO_(2)陶瓷(掺杂量为质量百分数),并对其微观结构和压电性能进行了研究。结果表明:BiAlO_(3)掺杂量较少时,陶瓷中缺陷偶极子的“钉扎”效应使得陶瓷畴壁转动困难,陶瓷压电性能较弱,应变滞后也较小。随BiAlO_(3)掺杂量增加,缺陷偶极子“钉扎”效应减弱,陶瓷的压电性能和应变滞后随之提高。本实验得到的性能最优组分为x=1.75%,该组份陶瓷的压电系数d_(33)=504 p C/N,机电耦合系数k_(p)=0.71,机械品质因数Q_(m)=281,居里温度T_(C)=312℃,在10k V/cm电场下的应变滞后仅为15%,并且还具有较好的温度稳定性,是一种具有应用价值的压电驱动器用压电陶瓷材料。
