In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se...In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.展开更多
基金partially supported by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803)the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004)+4 种基金the National Natural Science Foundation Project (51120125001, 61271053, 61306140, 61405033, 91333118, 61372030, 61307077 and 51202028)the Beijing Natural Science Foundation (4144076)the China Postdoctoral Science Foundation (2013M530613 and 2015T80080)the Natural Science Foundation Project of Jiangsu Province (BK20141390, BK20130629, and BK20130618)the Scientific Research Department of Graduate School in Southeast University
文摘In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.
