In this paper,a conventional soliton(CS)mode-locked erbium-doped fiber(EDF)laser was de-veloped using MAX phase material(MAX-PM)Nb_(4)AlC_(3)as a saturable absorber(SA).First,the liquid phase exfoliation(LPE)method wa...In this paper,a conventional soliton(CS)mode-locked erbium-doped fiber(EDF)laser was de-veloped using MAX phase material(MAX-PM)Nb_(4)AlC_(3)as a saturable absorber(SA).First,the liquid phase exfoliation(LPE)method was utilized to prepare Nb_(4)AlC_(3)nanosheets,and then a piece of tapered fiber was adopted to fabricate Nb_(4)AlC_(3)-SA.It was found that the saturation intensity and modulation depth of the Nb_(4)AlC_(3)-SA are 2.02 MW/cm^(2)and 1.88%.Based on the Nb_(4)AlC_(3)-SA,a conventional soliton(CS)mode-locked EDF laser was achieved.The central wavelength,pulse duration,and pulse repetition rate were found to be 1565.65 nm,615.37 fs,and 24.63 MHz,respectively.The performance is competitive and particularly superior in terms of pulse duration.This study fully confirms that Nb_(4)AlC_(3)possesses marvellous nonlinear saturable absorption properties and opens new possibilities for further research on air-stable ultrafast photon-ic devices.展开更多
文摘In this paper,a conventional soliton(CS)mode-locked erbium-doped fiber(EDF)laser was de-veloped using MAX phase material(MAX-PM)Nb_(4)AlC_(3)as a saturable absorber(SA).First,the liquid phase exfoliation(LPE)method was utilized to prepare Nb_(4)AlC_(3)nanosheets,and then a piece of tapered fiber was adopted to fabricate Nb_(4)AlC_(3)-SA.It was found that the saturation intensity and modulation depth of the Nb_(4)AlC_(3)-SA are 2.02 MW/cm^(2)and 1.88%.Based on the Nb_(4)AlC_(3)-SA,a conventional soliton(CS)mode-locked EDF laser was achieved.The central wavelength,pulse duration,and pulse repetition rate were found to be 1565.65 nm,615.37 fs,and 24.63 MHz,respectively.The performance is competitive and particularly superior in terms of pulse duration.This study fully confirms that Nb_(4)AlC_(3)possesses marvellous nonlinear saturable absorption properties and opens new possibilities for further research on air-stable ultrafast photon-ic devices.
