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Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy
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作者 FENG Xiang-Xu liu nai-xin +7 位作者 ZHANG Lian ZHANG Ning ZENG Jian-Ping WEI Xue-Cheng liu Zhe WEI Tong-Bo WANG Jun-Xi LI Jin-Min 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第10期199-202,共4页
Undoped AlInGaN epilayers on GaN templates with different hydrogen(H_(2))and nitrogen(N_(2))carrier gas ratios(1:8,2:8,and 3:8 as samples 1,2 and 3,respectively)were grown.When the flow ratio of H_(2) and N_(2) rises ... Undoped AlInGaN epilayers on GaN templates with different hydrogen(H_(2))and nitrogen(N_(2))carrier gas ratios(1:8,2:8,and 3:8 as samples 1,2 and 3,respectively)were grown.When the flow ratio of H_(2) and N_(2) rises from 1:8 to 3:8,an indium composition decrease from 3%to 1.2%is observed while the aluminum content stays constant at any flow ratio.Due to the quantum-dot-like effect,photoluminescence intensity is enhanced in the sample with the low carrier gas flow ratio of H_(2)/N_(2).However,the potential well caused by indium uneven distribution is nonuniform,which is more severe in the sample with carrier gas flow ratio 1:8.The process of carrier transfer from shallow to deep potential wells would be more difficult to accomplish,resulting in the reduction of the photoluminescence intensity.This is found to be consistent with the carriers'lifetime with the help of time-resolved photoluminescence. 展开更多
关键词 ALINGAN flow LIFETIME
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