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Observation of New Isotope^(131)Ag via the Two-Step Fragmentation Technique
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作者 WANG He N.Aoi +12 位作者 S.Takeuchi M.Matsushita P.Doornenbal T.Motobayashi D.Steppenbeck K.Yoneda k.kobayashi J.Lee LIU Hong-Na Y.Kondo R.Yokoyama H.Sakurai YE Yan-Lin 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第4期51-54,共4页
We report on the first observation of the neutron-rich nucleus^(131)Ag.This isotope was produced via fragmentation reactions of intense secondary radioactive ion beams,including 134,135Sn.The secondary beams were prod... We report on the first observation of the neutron-rich nucleus^(131)Ag.This isotope was produced via fragmentation reactions of intense secondary radioactive ion beams,including 134,135Sn.The secondary beams were produced from induced fission reactions from a stable 238U beam at 345 MeV/nucleon.Secondary reaction residues were selected by the ZeroDegree spectrometer and identified by measuring their magnetic rigidity,time of flight,energy loss,and total kinetic energy. 展开更多
关键词 RIGIDITY INTENSE
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体外生产牛胚胎的商业化应用
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作者 K.Endo k.kobayashi +2 位作者 J.Mizuno MIC Co.Ltd 王光雷 《草食家畜》 1992年第S1期90-90,共1页
本文介绍了1991年5月日本成立的一家MIC有限公司,用体外生产和移植牛胚胎进行育种的研究情况。在MIC农场进行了三个试验。用合理的价格购买约定数量可移植的日本黑牛胚胎,然后移植给黑白花牛。
关键词 体外生产 黑白花牛 卵母细胞 犊牛血清 体外受精 胚泡期 青年母牛 商业化应用 实验程序 胚泡移植
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IMPROVEMENT IN PARAMETRIC AND RELIABILITY PERFORMANCE OF 90NM DUAL-DAMASCENE INTERCONNECTS USING AR+PUNCHTHRU PVD BARRIER PROCESS Reprinted with permission as presented at SEMICON China 2005
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作者 N.Kumar S.Chu +4 位作者 D.L.Diehl K.Maekawa K.Mori k.kobayashi M.Yoneda 《集成电路应用》 2005年第9期43-49,共7页
As interconnects shrink beyond 90nm node, the presence of etch residues can createhigh via resistance and void nucleation during stress migration (SM) testing. Physical Ar+ preclean is effectivein removing residues, b... As interconnects shrink beyond 90nm node, the presence of etch residues can createhigh via resistance and void nucleation during stress migration (SM) testing. Physical Ar+ preclean is effectivein removing residues, but early SM failures have been seen due to Cu resputter from underlying trenches.Reactive preclean methods show promise in reducing CuOx and cleaning Si, N, F, C,O etch residues inpresence of H+, H* species. In this paper, reactive preclean and PVD PunchThru process (deposit-etch-deposit) is proposed as solution to conventional PVD.The PunchThru process reduces via resistance, improves SM and protects dual-damascene beveland unlanded vias from Cu diffusion by presence of thin Ta deposition step. In addition, the U-shaped interface,which minimizes electron crowding and localized heating effects, increases the mean time to failureby electromigration. Consistent, repeatable blanket film property and good parametric electrical test resultshave proven the production worthiness of this process. 展开更多
关键词 集成电路 芯片 制造工艺 封装技术
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