In this work,we report the reorientation of magnetization by spin-orbit torque(SOT)in YIG/Pt bilayers.The SOT is investigated by measuring the spin Hall magnetoresistance(SMR),which is highly sensitive to the directio...In this work,we report the reorientation of magnetization by spin-orbit torque(SOT)in YIG/Pt bilayers.The SOT is investigated by measuring the spin Hall magnetoresistance(SMR),which is highly sensitive to the direction of magnetic moment of YIG.An external in-plane rotating magnetic field which is applied to the YIG/Pt bilayers,and the evolutions of SMR under different injected currents in the Pt layer,result in deviation of SMR curve from the standard shape.We conclude that the SOT caused by spin accumulation near the interface between YIG and Pt can effectively reorient the inplane magnetic moment of YIG.This discovery provides an effective way to modulate YIG magnetic moments by electrical methods.展开更多
The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si ...The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.展开更多
The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any...The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.展开更多
基金Project supported by the Natural Science Foundation of Shaanxi Province,China(Grant No.2020JM-088)the National Natural Science Foundation of China(Grant Nos.51572222,51701158,and 51872241)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102017jc01001 and 310201911cx044).
文摘In this work,we report the reorientation of magnetization by spin-orbit torque(SOT)in YIG/Pt bilayers.The SOT is investigated by measuring the spin Hall magnetoresistance(SMR),which is highly sensitive to the direction of magnetic moment of YIG.An external in-plane rotating magnetic field which is applied to the YIG/Pt bilayers,and the evolutions of SMR under different injected currents in the Pt layer,result in deviation of SMR curve from the standard shape.We conclude that the SOT caused by spin accumulation near the interface between YIG and Pt can effectively reorient the inplane magnetic moment of YIG.This discovery provides an effective way to modulate YIG magnetic moments by electrical methods.
基金supported by the High Level Talent Project of Xiamen University of Technology,China(Grant Nos.YKJ16012R and YKJ16016R)the National Natural Science Foundation of China(Grant No.51702271)
文摘The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62004087,61474081,and 61534005)the Natural Science Foundation of Fujian Province,China(Grant No.2020J01815)+1 种基金the Natural Science Foundation of Zhangzhou,China(Grant No.ZZ2020J32)the Natural Science Foundation of Jiangxi Province,China(Grant No.20192ACBL20048).
文摘The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.
