An ultrafast framing camera with a pulse-dilation device,a microchannel plate(MCP)imager,and an electronic imaging system were reported.The camera achieved a temporal resolution of 10 ps by using a pulse-dilation devi...An ultrafast framing camera with a pulse-dilation device,a microchannel plate(MCP)imager,and an electronic imaging system were reported.The camera achieved a temporal resolution of 10 ps by using a pulse-dilation device and gated MCP imager,and a spatial resolution of 100μm by using an electronic imaging system comprising combined magnetic lenses.The spatial resolution characteristics of the camera were studied both theoretically and experimentally.The results showed that the camera with combined magnetic lenses reduced the field curvature and acquired a larger working area.A working area with a diameter of 53 mm was created by applying four magnetic lenses to the camera.Furthermore,the camera was used to detect the X-rays produced by the laser-targeting device.The diagnostic results indicated that the width of the X-ray pulse was approximately 18 ps.展开更多
The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ...The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.展开更多
基金National Natural Science Foundation of China(NSFC)(No.11775147)Guangdong Basic and Applied Basic Research Foundation(Nos.2019A1515110130 and 2024A1515011832)+1 种基金Shenzhen Key Laboratory of Photonics and Biophotonics(ZDSYS20210623092006020)Shenzhen Science and Technology Program(Nos.JCYJ20210324095007020,JCYJ20200109105201936 and JCYJ20230808105019039).
文摘An ultrafast framing camera with a pulse-dilation device,a microchannel plate(MCP)imager,and an electronic imaging system were reported.The camera achieved a temporal resolution of 10 ps by using a pulse-dilation device and gated MCP imager,and a spatial resolution of 100μm by using an electronic imaging system comprising combined magnetic lenses.The spatial resolution characteristics of the camera were studied both theoretically and experimentally.The results showed that the camera with combined magnetic lenses reduced the field curvature and acquired a larger working area.A working area with a diameter of 53 mm was created by applying four magnetic lenses to the camera.Furthermore,the camera was used to detect the X-rays produced by the laser-targeting device.The diagnostic results indicated that the width of the X-ray pulse was approximately 18 ps.
基金supported by Key-Area Research and Development Program of Guangdong Province,China (Grant Nos. 2020B010174001 and 2020B010171002)Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123)。
文摘The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.
