We measured refractive index and extinction coefficient of n type Hg1-xCdxTe with the null ellipsometric spectrum method over the visible light region at 77 and 300K,and the dispersion relation at different temperatur...We measured refractive index and extinction coefficient of n type Hg1-xCdxTe with the null ellipsometric spectrum method over the visible light region at 77 and 300K,and the dispersion relation at different temperature is discussed.The value of refractive index at 77K is smaller than that at 300K,and the changes of the extinction coefficient curve at 77K is also smaller than that at 300K.展开更多
Two coherent or incoherent stable self-pumped phase conjugations have been obtained simultaneously in a Ce-doped(K_(0.5)Na_(0.5))_(2y)(Sr_(0.61)Ba_(0.39))_(1-y) Nb_(2)O_(6)(KNSBN)crystal by using two mutually coherent...Two coherent or incoherent stable self-pumped phase conjugations have been obtained simultaneously in a Ce-doped(K_(0.5)Na_(0.5))_(2y)(Sr_(0.61)Ba_(0.39))_(1-y) Nb_(2)O_(6)(KNSBN)crystal by using two mutually coherent input beams from a He-Ne laser,and energy translation from one beam to another induces self-pumped phase conjugative reflectivity of one beam above 100%.展开更多
We report the first observations of nonlinear feature and optical bistability in n-CdHgTe at 77K and obtained computer simulated curves,then discuss contribution due to thermal effect.
The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical cal...The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical calculation,in which a more realistic interatomic potential and reasonable electronic stopping power were used.The SIMS result agrees well with the theoretical calculation.展开更多
The sputtering of Hg_(0.8)Cd_(0.2)Te target by low energy Ar^(+)ions has been simulated using Monte Carlo method.The simulation results show that the concentration of Hg in the surface region of the target after ion b...The sputtering of Hg_(0.8)Cd_(0.2)Te target by low energy Ar^(+)ions has been simulated using Monte Carlo method.The simulation results show that the concentration of Hg in the surface region of the target after ion bombardment is lower than the one before ion bombardment,but in a deeper region an excess concentration of Hg is produced due to recoil implantation.The excess concentration of Hg there may act as a donor dopant diffusion source for over doping the acceptor levels in the adjacent region and turn the p-type Hg_(0.8)Cd_(0.2)Te into an n-type material.展开更多
基金the National Natural Science Foundation of China.
文摘We measured refractive index and extinction coefficient of n type Hg1-xCdxTe with the null ellipsometric spectrum method over the visible light region at 77 and 300K,and the dispersion relation at different temperature is discussed.The value of refractive index at 77K is smaller than that at 300K,and the changes of the extinction coefficient curve at 77K is also smaller than that at 300K.
文摘Two coherent or incoherent stable self-pumped phase conjugations have been obtained simultaneously in a Ce-doped(K_(0.5)Na_(0.5))_(2y)(Sr_(0.61)Ba_(0.39))_(1-y) Nb_(2)O_(6)(KNSBN)crystal by using two mutually coherent input beams from a He-Ne laser,and energy translation from one beam to another induces self-pumped phase conjugative reflectivity of one beam above 100%.
基金Supported by the National Natural Science Foundation of China.
文摘We report the first observations of nonlinear feature and optical bistability in n-CdHgTe at 77K and obtained computer simulated curves,then discuss contribution due to thermal effect.
基金Projects supported by the Science Fund of the Chinese Academy of Sciences。
文摘The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical calculation,in which a more realistic interatomic potential and reasonable electronic stopping power were used.The SIMS result agrees well with the theoretical calculation.
文摘The sputtering of Hg_(0.8)Cd_(0.2)Te target by low energy Ar^(+)ions has been simulated using Monte Carlo method.The simulation results show that the concentration of Hg in the surface region of the target after ion bombardment is lower than the one before ion bombardment,but in a deeper region an excess concentration of Hg is produced due to recoil implantation.The excess concentration of Hg there may act as a donor dopant diffusion source for over doping the acceptor levels in the adjacent region and turn the p-type Hg_(0.8)Cd_(0.2)Te into an n-type material.
