This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, ...This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer Mo S2 is featured with a 1.9 e V gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed,many Mo S2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the Mo S2-based FETs are presented. Engineering of Mo S2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in Mo S2-based FETs, which is crucial for developing electronic and optoelectronic devices.展开更多
Chiral metamaterial absorbers(CMMAs),a particular class of chiral metamaterials that refuse the transmission of incident radiation and exhibit different optical responses upon interactions with left and right circular...Chiral metamaterial absorbers(CMMAs),a particular class of chiral metamaterials that refuse the transmission of incident radiation and exhibit different optical responses upon interactions with left and right circularly polarized(RCP)light,have gained research traction in recent years.CMMAs demonstrate numerous exotic and specialized applications owing to their achievable compatibility with various physical,chemical,and biomolecular systems.Aside from their well-evolved fabrication modalities for a broad range of frequencies,CMMAs exhibit strong chiroptical effects,making them central to various detection,imaging,and energy harvesting applications.Consequently,within the past decade,studies encompassing the design,optimization,and fabrication,as well as demonstrating the diverse applications of CMMAs have emerged.In this review,the theory,design,and fabrication of CMMAs are discussed,highlighting their top-down fabrication techniques as well as recent algorithmic and machine-learning(ML)-based approaches to the design and optimization.Some of their broad-spectrum applications are also discussed,spanning their roles in enantioselective photodetection,chiral imaging,generation of hot electrons,selective temperature sensing,and active chiral plasmonics.展开更多
文摘This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer Mo S2 is featured with a 1.9 e V gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed,many Mo S2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the Mo S2-based FETs are presented. Engineering of Mo S2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in Mo S2-based FETs, which is crucial for developing electronic and optoelectronic devices.
基金the China Postdoctoral Science Foundation under Grant No.2019M663467the National Natural Science Foundation of China under Grant No.62005037+2 种基金the Sichuan Science and Technology Program under Grant No.2020YJ0041the National Key Research and Development Program under Grant No.2019YFB2203400the“111 Project”under Grant No.B20030.
文摘Chiral metamaterial absorbers(CMMAs),a particular class of chiral metamaterials that refuse the transmission of incident radiation and exhibit different optical responses upon interactions with left and right circularly polarized(RCP)light,have gained research traction in recent years.CMMAs demonstrate numerous exotic and specialized applications owing to their achievable compatibility with various physical,chemical,and biomolecular systems.Aside from their well-evolved fabrication modalities for a broad range of frequencies,CMMAs exhibit strong chiroptical effects,making them central to various detection,imaging,and energy harvesting applications.Consequently,within the past decade,studies encompassing the design,optimization,and fabrication,as well as demonstrating the diverse applications of CMMAs have emerged.In this review,the theory,design,and fabrication of CMMAs are discussed,highlighting their top-down fabrication techniques as well as recent algorithmic and machine-learning(ML)-based approaches to the design and optimization.Some of their broad-spectrum applications are also discussed,spanning their roles in enantioselective photodetection,chiral imaging,generation of hot electrons,selective temperature sensing,and active chiral plasmonics.
