Hydrogels exhibit potential applications in smart wearable devices because of their exceptional sensitivity to various external stimuli.However,their applications are limited by challenges in terms of issues in biocom...Hydrogels exhibit potential applications in smart wearable devices because of their exceptional sensitivity to various external stimuli.However,their applications are limited by challenges in terms of issues in biocompatibility,custom shape,and self-healing.Herein,a conductive,stretchable,adaptable,self-healing,and biocompatible liquid metal GaInSn/Ni-based composite hydrogel is developed by incorporating a magnetic liquid metal into the hydrogel framework through crosslinking polyvinyl alcohol(PVA)with sodium tetraborate.The excellent stretchability and fast self-healing capability of the PVA/liquid metal hydrogel are derived from its abundant hydrogen binding sites and liquid metal fusion.Significantly,owing to the magnetic constituent,the PVA/liquid metal hydrogel can be guided remotely using an external magnetic field to a specific position to repair the broken wires with no need for manual operation.The composite hydrogel also exhibits sensitive deformation responses and can be used as a strain sensor to monitor various body motions.Additionally,the multifunctional hydrogel displays absorption-dominated electromagnetic interference(EMI)shielding properties.The total shielding performance of the composite hydrogel increases to~62.5 dB from~31.8 dB of the pure PVA hydrogel at the thickness of 3.0 mm.The proposed bioinspired multifunctional magnetic hydrogel demonstrates substantial application potential in the field of intelligent wearable devices.展开更多
With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been...With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.展开更多
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co...Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.展开更多
In these days,the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology.It is difficult to rely solely on the shrinking of semiconductor devices and sc...In these days,the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology.It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits(ICs)again in the foreseeable future.Exploring new materials,new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field.Ambipolar two-dimensional(2D)semiconductors,possessing excellent electrostatic field controllability and flexibly modulated major charge carriers,offer a possibility to construct reconfigurable devices and enable the ICs with new functions,showing great potential in computing capacity,energy efficiency,time delay and cost.This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors,and demonstrates their potential approach towards ICs,like reconfigurable circuits and neuromorphic chips.It is expected to help readers understand the device design principle of ambipolar 2D semiconductors,and push forward exploring more new-principle devices and new-architecture computing circuits,and even their product applications.展开更多
基金the financial supports from the National Natural Science Foundation of China(52231007,51725101,11727807,22088101,52271167)the Shanghai Excellent Academic/Technological Leaders Program(19XD1400400)+4 种基金the Ministry of Science and Technology of China(973 Project Nos.2018YFA0209100 and 2021YFA1200600)the Fundamental Research Funds for the Central Universities(2022JCCXHH09)the Foundation for University Youth Key Teachers of Henan Province(2020GGJS170)the Support Program for Scientific and Technological Innovation Talents of Higher Education in Henan Province(21HASTIT004)Key Research Project of Zhejiang Lab(No.2021PE0AC02)。
文摘Hydrogels exhibit potential applications in smart wearable devices because of their exceptional sensitivity to various external stimuli.However,their applications are limited by challenges in terms of issues in biocompatibility,custom shape,and self-healing.Herein,a conductive,stretchable,adaptable,self-healing,and biocompatible liquid metal GaInSn/Ni-based composite hydrogel is developed by incorporating a magnetic liquid metal into the hydrogel framework through crosslinking polyvinyl alcohol(PVA)with sodium tetraborate.The excellent stretchability and fast self-healing capability of the PVA/liquid metal hydrogel are derived from its abundant hydrogen binding sites and liquid metal fusion.Significantly,owing to the magnetic constituent,the PVA/liquid metal hydrogel can be guided remotely using an external magnetic field to a specific position to repair the broken wires with no need for manual operation.The composite hydrogel also exhibits sensitive deformation responses and can be used as a strain sensor to monitor various body motions.Additionally,the multifunctional hydrogel displays absorption-dominated electromagnetic interference(EMI)shielding properties.The total shielding performance of the composite hydrogel increases to~62.5 dB from~31.8 dB of the pure PVA hydrogel at the thickness of 3.0 mm.The proposed bioinspired multifunctional magnetic hydrogel demonstrates substantial application potential in the field of intelligent wearable devices.
基金This work is supported by This work was supported by the National Key R&D Program of China(Nos.2020YFB2008604 and 2021YFB3202500)the National Natural Science Foundation of China(Nos.61874034 and 51861135105)+1 种基金the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)Fudan University-CIOMP Joint Fund(E02632Y7H0).
文摘With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.
基金Project supported by the National Natural Science Foundation of China (Grant No.61874029)。
文摘Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.
基金Project supported by the National Natural Science Foundation of China (Grant No.62274037)the National Key Research and Development Program of China (Grant No.2018YFA0703703)+1 种基金the Ministry of Science and Technology of China (Grant No.2018YFE0118300)the State Key Laboratory of ASIC&System (Grant No.2021MS003)。
文摘In these days,the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology.It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits(ICs)again in the foreseeable future.Exploring new materials,new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field.Ambipolar two-dimensional(2D)semiconductors,possessing excellent electrostatic field controllability and flexibly modulated major charge carriers,offer a possibility to construct reconfigurable devices and enable the ICs with new functions,showing great potential in computing capacity,energy efficiency,time delay and cost.This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors,and demonstrates their potential approach towards ICs,like reconfigurable circuits and neuromorphic chips.It is expected to help readers understand the device design principle of ambipolar 2D semiconductors,and push forward exploring more new-principle devices and new-architecture computing circuits,and even their product applications.
