In the present work,we investigate the structural,optoelectronic and thermoelectric properties of the YLi3X2(X = Sb,Bi) compounds using the full potential augmented plane wave plus local orbital(FP-APW+lo) method.The ...In the present work,we investigate the structural,optoelectronic and thermoelectric properties of the YLi3X2(X = Sb,Bi) compounds using the full potential augmented plane wave plus local orbital(FP-APW+lo) method.The exchangecorrelation potential is treated with the generalized gradient approximation/local density approximation(GGA/LDA) and with the modified Becke-Johnson potential(TB-mBJ) in order to improve the electronic band structure calculations.In addition,the estimated ground state properties such as the lattice constants,external parameters,and bulk moduli agree well with the available experimental data.Our band structure calculations with GGA and LDA predict that both compounds have semimetallic behaviors.However,the band structure calculations with the GGA/TB-mBJ approximation indicate that the ground state of the YLi3Sb2compound is semiconducting and has an estimated indirect band gap(Γ-L) of about 0.036 eV while the ground state of YLi3Bi2compound is semimetallic.Conversely the LDA/TB-mBJ calculations indicate that both compounds exhibit semiconducting characters and have an indirect band gap(Γ-L) of about 0.15 eV and 0.081 eV for YLi3Sb and YLi3Bi2respectively.Additionally,the optical properties reveal strong responses of the herein materials in the energy range between the IR and extreme UV regions.Thermoelectric properties such as thermal conductivity,electrical conductivity,Seebeck coefficient,and thermo power factors are also calculated.展开更多
The structural,electronic,and magnetic properties of the Nd-doped Rare earth aluminate,La1-xNdxAlO3（x = 0%to 100%） alloys are studied using the full potential linearized augmented plane wave（FP-LAPW） method within...The structural,electronic,and magnetic properties of the Nd-doped Rare earth aluminate,La1-xNdxAlO3（x = 0%to 100%） alloys are studied using the full potential linearized augmented plane wave（FP-LAPW） method within the density functional theory.The effects of the Nd substitution in La AlO3 are studied using the supercell calculations.The computed electronic structure with the modified Becke–Johnson（m BJ） potential based approximation indicates that the La1-xNdxAlO3 alloys may possess half-metallic（HM） behaviors when doped with Nd of a finite density of states at the Fermi level（EF）.The direct and indirect band gaps are studied each as a function of x which is the concentration of Nddoped La AlO3.The calculated magnetic moments in the La1-xNdxAlO3 alloys are found to arise mainly from the Nd-4f state.A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at EF.The observed decrease of the band gap with the increase in the concentration of Nd doping in La AlO3 is a suitable technique for harnessing useful spintronic and magnetic devices.展开更多
基金the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 00
文摘In the present work,we investigate the structural,optoelectronic and thermoelectric properties of the YLi3X2(X = Sb,Bi) compounds using the full potential augmented plane wave plus local orbital(FP-APW+lo) method.The exchangecorrelation potential is treated with the generalized gradient approximation/local density approximation(GGA/LDA) and with the modified Becke-Johnson potential(TB-mBJ) in order to improve the electronic band structure calculations.In addition,the estimated ground state properties such as the lattice constants,external parameters,and bulk moduli agree well with the available experimental data.Our band structure calculations with GGA and LDA predict that both compounds have semimetallic behaviors.However,the band structure calculations with the GGA/TB-mBJ approximation indicate that the ground state of the YLi3Sb2compound is semiconducting and has an estimated indirect band gap(Γ-L) of about 0.036 eV while the ground state of YLi3Bi2compound is semimetallic.Conversely the LDA/TB-mBJ calculations indicate that both compounds exhibit semiconducting characters and have an indirect band gap(Γ-L) of about 0.15 eV and 0.081 eV for YLi3Sb and YLi3Bi2respectively.Additionally,the optical properties reveal strong responses of the herein materials in the energy range between the IR and extreme UV regions.Thermoelectric properties such as thermal conductivity,electrical conductivity,Seebeck coefficient,and thermo power factors are also calculated.
基金Project supported by the DST-SERB,Dy(Grant No.SERB/3586/2013-14)the UGCBSR,FRPS(Grant No.F.30-52/2014)+2 种基金the UGC(New Delhi,India)Inspire Fellowship DST(India)the Deanship of Scientific Research at King Saud University(Grant No.RPG-VPP-088)M P Ghimire thanks the Alexander von Humboldt Foundation,Germany for the financial support
文摘The structural,electronic,and magnetic properties of the Nd-doped Rare earth aluminate,La1-xNdxAlO3（x = 0%to 100%） alloys are studied using the full potential linearized augmented plane wave（FP-LAPW） method within the density functional theory.The effects of the Nd substitution in La AlO3 are studied using the supercell calculations.The computed electronic structure with the modified Becke–Johnson（m BJ） potential based approximation indicates that the La1-xNdxAlO3 alloys may possess half-metallic（HM） behaviors when doped with Nd of a finite density of states at the Fermi level（EF）.The direct and indirect band gaps are studied each as a function of x which is the concentration of Nddoped La AlO3.The calculated magnetic moments in the La1-xNdxAlO3 alloys are found to arise mainly from the Nd-4f state.A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at EF.The observed decrease of the band gap with the increase in the concentration of Nd doping in La AlO3 is a suitable technique for harnessing useful spintronic and magnetic devices.
