Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes o...Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.展开更多
Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y...Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y and bandwidth of the photodetectors is studied.The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8μm.For the 4×8μm^2 photodetector,the dark current density is as low as 5 mA/cm^2 at^-1 V.At a bias of-1 V,the 1550 nm optical responsivity is as high as 0.82 A/W.Bandwidth as high as 29 GHz is obtained at-4 V.Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.展开更多
Step-coupler waveguide-integrated Ge/Si avalanche photodetector(APD) is based on the vertical multimode interference(MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical ...Step-coupler waveguide-integrated Ge/Si avalanche photodetector(APD) is based on the vertical multimode interference(MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at-6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2018 YFB 2200500)the National Natural Science Foundation of China(Grant Nos.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)。
文摘Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.
基金Supported by the National Key Research and Development Program of China(Grant No.2017YFA0206404)the National Natural Science Foundation of China(Grant Nos.61435013,61534005,61534004,61604146,and 61774143)+1 种基金the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDY-SSW-JSC022)the Beijing Education Commission Project(Grant No.SQKM201610005008)。
文摘Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y and bandwidth of the photodetectors is studied.The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8μm.For the 4×8μm^2 photodetector,the dark current density is as low as 5 mA/cm^2 at^-1 V.At a bias of-1 V,the 1550 nm optical responsivity is as high as 0.82 A/W.Bandwidth as high as 29 GHz is obtained at-4 V.Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402502 and 2017YFF0104803)the National Natural Science Foundation of China(Grant Nos.61674140 and 61505003)+2 种基金the Beijing Natural Science Foundation,China(Grant No.4162063)Beijing Education Commission Project(Grant No.SQKM201610005008)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)
文摘Step-coupler waveguide-integrated Ge/Si avalanche photodetector(APD) is based on the vertical multimode interference(MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at-6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.
