p-i-n Al_(x)Ga_(1−x)As/GaAs detectors with graded compositions and graded doping were grown and prepared.From the current-voltage and capacitance-voltage measurement results,the devices had good p-n junction diode cha...p-i-n Al_(x)Ga_(1−x)As/GaAs detectors with graded compositions and graded doping were grown and prepared.From the current-voltage and capacitance-voltage measurement results,the devices had good p-n junction diode characteristics,and the electric field strength under an unbiased voltage was 1.7×10^(5) Vcm^(-1).The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%,respectively.In this study,we created the most advanced and promising state-of-the-art unbiased detector reported to date.展开更多
基金supported by the National Natural Science Foundation of China(No.61964001)General Project of Jiangxi Province Key R&D Program(No.20212BBG73012)+3 种基金Natural Science Foundation of Jiangxi Province(No.20192BAB207033)Key Scientific Research Projects of Henan Higher Education Institutions(No.22A490001)State Key Laboratory of Particle Detection and Electronics(No.SKLPDE-KF-2019)Jiangxi Provincial Postdoctoral Science Foundation(No.2019RC30).
文摘p-i-n Al_(x)Ga_(1−x)As/GaAs detectors with graded compositions and graded doping were grown and prepared.From the current-voltage and capacitance-voltage measurement results,the devices had good p-n junction diode characteristics,and the electric field strength under an unbiased voltage was 1.7×10^(5) Vcm^(-1).The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%,respectively.In this study,we created the most advanced and promising state-of-the-art unbiased detector reported to date.
