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High‑Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium‑Ion Storage 被引量:3
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作者 changlong sun Xin Xu +5 位作者 Cenlin Gui Fuzhou Chen Yian Wang Shengzhou Chen Minhua Shao Jiahai Wang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第11期185-204,共20页
Tailoring the interfacial interaction in SiCbased anode materials is crucial to the accomplishment of higher energy capacities and longer cycle lives for lithium-ion storage.In this paper,atomic-scale tunable interfac... Tailoring the interfacial interaction in SiCbased anode materials is crucial to the accomplishment of higher energy capacities and longer cycle lives for lithium-ion storage.In this paper,atomic-scale tunable interfacial interaction is achieved by epitaxial growth of high-quality N doped graphene(NG)on SiC(NG@SiC).This well-designed NG@SiC heterojunction demonstrates an intrinsic electric field with intensive interfacial interaction,making it an ideal prototype to thoroughly understand the configurations of electron/ion bridges and the mechanisms of interatomic electron migration.Both density functional theory(DFT)analysis and electrochemical kinetic analysis reveal that these intriguing electron/ion bridges can control and tailor the interfacial interaction via the interfacial coupled chemical bonds,enhancing the interfacial charge transfer kinetics and preventing pulverization/aggregation.As a proof-of-concept study,this well-designed NG@SiC anode shows good reversible capacity(1197.5 mAh g^(−1)after 200 cycles at 0.1 A g^(−1))and cycling durability with 76.6%capacity retention at 447.8 mAh g^(−1)after 1000 cycles at 10.0 A g^(−1).As expected,the lithium-ion full cell(LiFePO_(4)/C//NG@SiC)shows superior rate capability and cycling stability.This interfacial interaction tailoring strategy via epitaxial growth method provides new opportunities for traditional SiC-based anodes to achieve high-performance lithium-ion storage and beyond. 展开更多
关键词 SIC HETEROJUNCTION Interfacial engineering Lithium-ion battery DFT calculation
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Atomic insights of electronic states engineering of GaN nanowires by Cu cation substitution for highly efficient lithium ion battery 被引量:1
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作者 Zhenjiang Li Kesheng Gao +10 位作者 Ying Han Shiqi Ding Yanglansen Cui Minmin Hu Jian Zhao Meng Zhang Alan Meng Jimmy Yun Zhiming Liu Da-Wei Wang changlong sun 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2022年第4期46-54,共9页
Electronic engineering of gallium nitride(Ga N) is critical for enhancement of its electrode performance.In this work, copper(Cu) cation substituted Ga N(Cu-Ga N) nanowires were fabricated to understand the electronic... Electronic engineering of gallium nitride(Ga N) is critical for enhancement of its electrode performance.In this work, copper(Cu) cation substituted Ga N(Cu-Ga N) nanowires were fabricated to understand the electronically engineered electrochemical performance for Li ion storage. Cu cation substitution was revealed at atomic level by combination of X-ray photoelectron spectroscopy(XPS), X-ray absorption fine structure(XAFS), density functional theory(DFT) simulation, and so forth. The Cu-Ga N electrode delivered high capacity of 813.2 m A h g^(-1) at 0.1 A g^(-1) after 200 cycles, increased by 66% relative to the unsubstituted Ga N electrode. After 2000 cycles at 10 A g^(-1),the reversible capacity was still maintained at326.7 m A h g^(-1). The DFT calculations revealed that Cu substitution introduced the impurity electronic states and efficient interatomic electron migration, which can enhance the charge transfer efficiency and reduce the Li ion adsorption energy on the Cu-Ga N electrode. The ex-situ SEM, TEM, HRTEM, and SAED analyses demonstrated the reversible intercalation Li ion storage mechanism and good structural stability. The concept of atomic-arrangement-assisted electronic engineering strategy is anticipated to open up opportunities for advanced energy storage applications. 展开更多
关键词 Cu cation substitution Electronic states engineering GaN nanowires Lithium-ion batteries DFT
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