In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors gra...In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.展开更多
Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective al...Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.展开更多
Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-t...Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.展开更多
We report a new type of planar metamaterial consisting of a pair of homogeneous parallel plates separated by a thin medium. Strong magnetic response and negative effective permeability are observed in the materials at...We report a new type of planar metamaterial consisting of a pair of homogeneous parallel plates separated by a thin medium. Strong magnetic response and negative effective permeability are observed in the materials at wavelengths from 6.9 μm to 5.8 μm. The resonant wavelength and the value of the negative permeability can be tuned by varying the structure dimensions. Such planar metamaterials can be easily fabricated with mature thin film technology and are of great potential for device applications.展开更多
基金Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62222413,62025405,62105100,62075228 and 62334001)+1 种基金Natural Science Foundation of Shanghai(23ZR1473400)Hundred Talents Program of the Chinese Academy of Sciences。
文摘In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.
基金Supported by National Key Research and Development Program in the 14th five year plan(2021YFA1200700)Strategic Priority Re⁃search Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62025405,62104235,62105348).
文摘Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.
基金Supported by the National Natural Science Foundation of China(NSFC 62105100)the National Key research and development program in the 14th five year plan(2021YFA1200700)。
文摘Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.
基金supported by the National Research Foundation, Singapore A ＊ Star SERC grant（ No. 0421010078） +1 种基金 the National Natural Science Foundation of China（ No. 60407014 and 60527005 ） the National Grant Foundation Project（ No. GO01 CB3095 ）.
文摘We report a new type of planar metamaterial consisting of a pair of homogeneous parallel plates separated by a thin medium. Strong magnetic response and negative effective permeability are observed in the materials at wavelengths from 6.9 μm to 5.8 μm. The resonant wavelength and the value of the negative permeability can be tuned by varying the structure dimensions. Such planar metamaterials can be easily fabricated with mature thin film technology and are of great potential for device applications.
