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Insight into the topology effect on the diffusion of ethene and propene in zeolites: A molecular dynamics simulation study 被引量:6
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作者 Chuanming Wang bowei li +1 位作者 Yangdong Wang Zaiku Xie 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2013年第6期914-918,共5页
Selectivity control is a difficult scientific and industrial challenge in methanol-to-olefins(MTO)conversion.It has been experimentally established that the topology of zeolite catalysts influenced the distribution of... Selectivity control is a difficult scientific and industrial challenge in methanol-to-olefins(MTO)conversion.It has been experimentally established that the topology of zeolite catalysts influenced the distribution of products.Besides the topology effect on reaction kinetics,the topology influences the diffusion of reactants and products in catalysts as well.In this work,by using COMPASS force-field molecular dynamics method,we investigated the intracrystalline diffusion of ethene and propene in four different zeolites,CHA,MFI,BEA and FAU,at different temperatures.The self-diffusion coefficients and diffusion activation barriers were calculated.A strong restriction on the diffusion of propene in CHA was observed because the self-diffusion coefficient ratio of ethene to propene is larger than 18 and the diffusion activation barrier of propene is more than 20 kJ/mol in CHA.This ratio decreases with the increase of temperature in the four investigated zeolites.The shape selectivity on products from diffusion perspective can provide some implications on the understanding of the selectivity difference between HSAPO-34 and HZSM-5 catalysts for the MTO conversion. 展开更多
关键词 methanol-to-olefins conversion diffusion zeolites ETHENE PROPENE molecular dynamics simulation
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Effect of the codoping of N-H-O on the growth characteristics and defects of diamonds under high temperature and high pressure 被引量:2
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作者 Zhenghao Cai bowei li +5 位作者 liangchao Chen Zhiwen Wang Shuai Fang Yongkui Wang Hongan Ma Xiaopeng Jia 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第10期113-119,共7页
Diamond crystals were synthesized with different doping proportions of N-H-O at 5.5 GPa-7.1 GPa and 1370℃-1450℃. With the increase in the N-H-O doping ratio, the crystal growth rate decreased, the temperature and pr... Diamond crystals were synthesized with different doping proportions of N-H-O at 5.5 GPa-7.1 GPa and 1370℃-1450℃. With the increase in the N-H-O doping ratio, the crystal growth rate decreased, the temperature and pressure conditions required for diamond nucleation became increasingly stringent, and the diamond crystallization process was affected. [111] became the dominant plane of diamonds;surface morphology became block-like;and growth texture,stacking faults, and etch pits increased. The diamond crystals had a two-dimensional growth habit. Increasing the doping concentration also increased the amount of N that entered the diamond crystals as confirmed via Fourier transform infrared spectroscopy. However, crystal quality gradually deteriorated as verified by the red-shifting of Raman peak positions and the widening of the Raman full width at half maximum. With the increase in the doping ratio, the photoluminescence property of the diamond crystals also drastically changed. The intensity of the N vacancy center of the diamond crystals changed, and several Ni-related defect centers, such as the NE1 and NE3 centers, appeared. Diamond synthesis in N-H-O-bearing fluid provides important information for deepening our understanding of the growth characteristics of diamonds in complex systems and the formation mechanism of natural diamonds, which are almost always N-rich and full of various defect centers. Meanwhile, this study proved that the type of defect centers in diamond crystals could be regulated by controlling the N-H-O impurity contents of the synthesis system. 展开更多
关键词 HPHT N-H-O codoping synthetic diamond nitrogen concentration defects in diamond
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Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system:Effect of synthesis pressure 被引量:1
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作者 刘杨 王志文 +5 位作者 李博维 赵洪宇 王胜学 陈良超 马红安 贾晓鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第12期602-608,共7页
Pressure is one of the necessary conditions for diamond growth.Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality diamonds.This work re... Pressure is one of the necessary conditions for diamond growth.Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality diamonds.This work reports the morphology,impurity content and crystal quality characteristics of silicon-doped diamond crystals synthesized under different pressures.Fourier transform infrared spectroscopy shows that with the increase of pressure,the nitrogen content in the C-center inside the diamond crystal decreases.X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon powder.Raman spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamonds from 1331.18 cm^(-1)to 1331.25 cm^(-1),resulting in a decrease in internal stress in the crystal.The half-peak width decreased from 5.41 cm^(-1)to 5.26 cm^(-1),and the crystallinity of the silicon-doped diamond crystals improved,resulting in improved quality.This work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds. 展开更多
关键词 silicon-doped diamond crystal quality pressure effect nitrogen content
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