A depth behavioral understanding for each layer in perovskite solar cells （PSCs） and their inter[acial interactions as a whole has been emerged for further enhancement in power conversion efficiency （PCE）. Herein,...A depth behavioral understanding for each layer in perovskite solar cells （PSCs） and their inter[acial interactions as a whole has been emerged for further enhancement in power conversion efficiency （PCE）. Herein, NiO@Carbon was not only simulated as a hole transport layer but also as a counter electrode at the same time in the planar heterojunction based PSCs with the program wxAMPS （analysis of microelectronic and photonic structures）-lD. Simulation results revealed a high dependence of PCE on the effect of band offset between hole transport material （HTM） and perovskite layers. Meanwhile, the valence band offset （AEv） of NiO-HTM was optimized to be -0.1 to -0.3 eV lower than that of the perovskite layer. Additionally, a barrier cliff was identified to significantly influence the hole extraction at the HTM/absorber interface. Conversely, the AEv between the active material and NiO@Carbon-HTM was derived to be -0.15 to 0.15 eV with an enhanced efficiency from 15% to 16%.展开更多
基金Project supported by the National High-tech Research and Development Program of China(Grant No.2015AA034601)the National Natural Science Foundation of China(Grant Nos.51772096,91333122,51372082,51402106,and 11504107)+2 种基金the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20130036110012)the Par-Eu Scholars Program,Beijing Municipal Science and Technology Project,China(Grant No.Z161100002616039)the Fundamental Research Funds for the Central Universities of China(Grant Nos.2016JQ01,2015ZZD03,2015ZD07,and 2017ZZD02)
文摘A depth behavioral understanding for each layer in perovskite solar cells （PSCs） and their inter[acial interactions as a whole has been emerged for further enhancement in power conversion efficiency （PCE）. Herein, NiO@Carbon was not only simulated as a hole transport layer but also as a counter electrode at the same time in the planar heterojunction based PSCs with the program wxAMPS （analysis of microelectronic and photonic structures）-lD. Simulation results revealed a high dependence of PCE on the effect of band offset between hole transport material （HTM） and perovskite layers. Meanwhile, the valence band offset （AEv） of NiO-HTM was optimized to be -0.1 to -0.3 eV lower than that of the perovskite layer. Additionally, a barrier cliff was identified to significantly influence the hole extraction at the HTM/absorber interface. Conversely, the AEv between the active material and NiO@Carbon-HTM was derived to be -0.15 to 0.15 eV with an enhanced efficiency from 15% to 16%.
