Undoped and Si-doped AlGaN/AlN multiple quantum wells （MQWs） were grown on A1N/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality...Undoped and Si-doped AlGaN/AlN multiple quantum wells （MQWs） were grown on A1N/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature （RT） cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.展开更多
Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many resear...Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.60976011)the Knowledge Innovation Program of CIOMP(Grant No.08CY32M080)+1 种基金the Akasaki Research Center at Nagoya University,Japan,the Grants-in-Aid for Scientific Research of the Ministry of Education,Culture,Sports,Science and Technology of Japan(Grant Nos.18360008 and 18560010)the Scientific Research on Priority Areas of the Ministry of Education,Culture,Sports,Science and Technology of Japan (Grant No.18069006)
文摘Undoped and Si-doped AlGaN/AlN multiple quantum wells （MQWs） were grown on A1N/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature （RT） cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400904)the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61725403)+5 种基金the National Natural Science Foundation of China(Grant Nos.61574142,61322406,61704171,and 11705206)the Key Program of International Partnership Program of the Chinese Academy of Sciences(Grant No.181722KYSB20160015)the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(Grant No.2016YFE0118400)the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Jilin Provincial Science&Technology Department,China(Grant No.20180201026GX)the Interdisciplinary Innovation Team of the Chinese Academy of Sciencesthe Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2015171)
文摘Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.
