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Monte Carlo Simulation of Sculptured Thin Films Growth of SiO2 on Si for Applications 被引量:2
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作者 江绍基 余梦影 +1 位作者 魏钰薇 唐继甲 《Chinese Physics Letters》 SCIE CAS CSCD 2008年第12期4456-4458,共3页
A fully three-dimensional Monte Carlo model for simulation of sculptured thin-film growth is presented. After explaining the model, the simulation results are compared with the corresponding experiments, and encouragi... A fully three-dimensional Monte Carlo model for simulation of sculptured thin-film growth is presented. After explaining the model, the simulation results are compared with the corresponding experiments, and encouraging consistency is proven. The morphology of sculptured thin films is then compared on periodical patterned and bare substrates. It is shown that there are more uniform structures and hence possible better optical properties by fabricating on patterned substrates. Finally, with the aid of computer simulation, we examine the sell-shadowing effect and our theoretical analysis of simulated morphology data deals with the accuracy of this model. 展开更多
关键词 field emission molybdenum dioxide enhancement factor
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