Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With prote...Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.展开更多
The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout pr...The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.展开更多
In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as...In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control line.Both methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit types.The two methods differ in correction accuracy and complexity.The first,coarse predistortion(CPD)method,partially mitigates distortion.The second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation uniformity.Both methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic pulse.We believe these methods will enhance qubit characterization accuracy and operation quality in future applications.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12074368, 92165207, 12034018, and 92265113)the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300)+1 种基金the Anhui Province Natural Science Foundation (Grant No. 2108085J03)the USTC Tang Scholarship。
文摘Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing.Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.12074368,92165207,12034018,and 62004185)the Anhui Province Natural Science Foundation (Grant No.2108085J03)the USTC Tang Scholarship。
文摘The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12074368,92165207,12474490,12034018,and 92265113)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300)+1 种基金the USTC Tang Scholarshippartially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication。
文摘In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and control.Here,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control line.Both methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit types.The two methods differ in correction accuracy and complexity.The first,coarse predistortion(CPD)method,partially mitigates distortion.The second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation uniformity.Both methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic pulse.We believe these methods will enhance qubit characterization accuracy and operation quality in future applications.
