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电弧喷涂铝层的微弧氧化 被引量:9
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作者 顾伟超 沈德久 +1 位作者 王玉林 廖波 《材料保护》 CAS CSCD 北大核心 2002年第12期37-38,共2页
介绍了在低碳钢表面进行电弧喷涂铝 ,然后采用微弧氧化获得陶瓷膜的方法。分析了不同喷涂工艺参数的电弧喷涂铝层的微弧氧化 ,观察了复合膜层的断面形貌 ,进行了X 射线衍射分析 ,并研究了陶瓷层厚度随电流密度和强化时间的变化情况。
关键词 电弧喷涂铝层 微弧氧化 陶瓷膜
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Microstructure and Corrosion Performance of Oxide Coatings on Aluminium by Plasma Electrolytic Oxidation in Silicate and Phosphate Electrolytes 被引量:3
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作者 吕国华 顾伟超 +3 位作者 陈睆 李立 牛二武 杨思泽 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第12期3331-3333,共3页
Ceramic coatings are fabricated on pure aluminium by plasma electrolytic oxidation (PEO) in three kinds of electrolyte systems [E1: 0.05M NaOH+0.033M Na2SiO3, E2: 0.025M NaOH+0.008M (NAPO3)6 and E3: 0.025M N... Ceramic coatings are fabricated on pure aluminium by plasma electrolytic oxidation (PEO) in three kinds of electrolyte systems [E1: 0.05M NaOH+0.033M Na2SiO3, E2: 0.025M NaOH+0.008M (NAPO3)6 and E3: 0.025M NaOH+0.066M Na2SiO3+0.008M (NAPO3)6]. The voltage-time responses show that the PEO process of E2 has the highest discharging voltage, which results in the biggest pores and heaviest cracks on the surfaces. X-ray diffraction results show that coatings produced in E1 and E3 are mainly composed of γ-Al2O3 and mullite, while coatings produced in E2 are mainly composed of a-Al2O3. After PEO treatment the corrosion resistance of aluminium is improved significantly and the coatings produced in E3 perform the best corrosion resistance. 展开更多
关键词 MICROARC OXIDATION DEPOSITION ALLOY
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Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation 被引量:1
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作者 张谷令 王久丽 +7 位作者 吴杏芳 冯文然 陈光良 顾伟超 牛二武 范松华 刘赤子 杨思泽 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第5期1241-1244,共4页
A new method named the magnetic glow-arc plasma source ion implantation (MGA-PSⅡ) is proposed for inner surface modification of tubes. In MGA-PSⅡ, under the control of an axial magnetic field, which is generated b... A new method named the magnetic glow-arc plasma source ion implantation (MGA-PSⅡ) is proposed for inner surface modification of tubes. In MGA-PSⅡ, under the control of an axial magnetic field, which is generated by an electric coil around the tube sample, glow arc plasma moves spirally into the tube from its two ends. A negative voltage applied on the tube realized its inner surface implantation. Titanium nitride (TIN) films are prepared on the inner surface of a stainless steel tube in diameter 90mm and length 600mm. Hardness tests show that the hardness at the tube centre is up to 20 GPa. XRD, XPS and AES analyses demonstrate that good quality of TiN films can be achieved. 展开更多
关键词 DEPOSITION TIN
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A Novel Atmospheric Pressure Plasma Fluidized Bed and Its Application in Mutation of Plant Seeds 被引量:2
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作者 陈光良 范松华 +10 位作者 李春玲 顾伟超 冯文然 张谷令 王久丽 LatifK. 张树根 王振泉 韩尔立 付亚波 杨思泽 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第8期1980-1983,共4页
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Preparation and Microstructure of Tantalum Nitride Thin Film by Cathodic Arc Deposition
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作者 李立 牛二武 +7 位作者 吕国华 冯文然 顾伟超 陈光良 张谷令 范松华 刘赤子 杨思泽 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第11期3018-3021,共4页
Tantalum nitride (TAN) thin films are achieved on Si(111) and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morpholo... Tantalum nitride (TAN) thin films are achieved on Si(111) and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0 V and -50 V, the amorphous TaN film is obtained. As the bias increases to -100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred (300) orientation is prepared at a bias of -200 V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f(7/2) is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures. 展开更多
关键词 BEAM-ASSISTED DEPOSITION DIFFUSION BARRIER TAN METALLIZATION IMPLANTATION COPPER CU
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