The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. Th...The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250 ℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the （1120） and （1100） faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the （0001） face under the same NO annealing condition. In addition, it is found that Fowler-Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole-Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.展开更多
The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping c...The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.展开更多
基金supported by the National Basic Research Program of China(Grant No.2015CB759600)the National Natural Science Foundation of China(Grant Nos.61474113 and 61574140)+3 种基金the Beijing NOVA Program,China(Grant No.Z1611000049161132016071)China Academy of Engineering Physics(CAEP)Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201502)the Beijing Municipal Science and Technology Commission Project,China(Grant Nos.Z161100002116018 and D16110300430000)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098)
文摘The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250 ℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the （1120） and （1100） faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the （0001） face under the same NO annealing condition. In addition, it is found that Fowler-Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole-Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61176070 and 61274079)the Doctoral Fund of Ministry of Education of China (Grant No. 20110203110010)the Key Specific Projects of Ministry of Education of China (Grant No. 625010101)
文摘The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.
