We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （...We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.展开更多
基金Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101)the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046)+2 种基金the Science and Technology Innovation Program of Department of Education of Guangdong Province,China (Grant No.2012CXZD0017)the Industry–Academia Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169)the Science and Technology Innovation Platform of Industry–Academia Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)
文摘We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.
