We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）....We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer （XRD） and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.展开更多
Indium-doped ZnO(ZnO:In) films are deposited on quartz substrates by rf magnetron sputtering. The effects of post-annealing on structural, electrical, optical and Raman properties are investigated by x-ray diffraction...Indium-doped ZnO(ZnO:In) films are deposited on quartz substrates by rf magnetron sputtering. The effects of post-annealing on structural, electrical, optical and Raman properties are investigated by x-ray diffraction,Raman scattering, Hall measurement and first-principles calculation. The results indicate that all of the ZnO:In films have excellent crystallinity with a preferred ZnO(002) orientation. It is found that the incorporation of In can dramatically increase the intensity of the 274 cm^(-1) Raman mode. However, both post-annealing treatment and increasing O_2 partial pressure in the process of preparing thin films can reduce the intensity of the 274 cm^(-1) mode or even eliminate it, and relax compressive stress of the ZnO:In film judged by analyzing the shifts of the(002) Bragg peaks and E_2(high) mode. Finally, the origin of the 274 cm^(-1) mode is inferred to be the vibration of Zn interstitial(Zni) defects, which play a crucial role in the high electron concentration and low resistivity of ZnO:In films annealed in an appropriate temperature range(450–600℃).展开更多
First-principles calculations based on spin density functional theory are performed to study the spin-resolved elec- tronic properties of ZnO codoped with Cu and N. （Cu, N）-codoped ZnO exhibits magnetism, and the to...First-principles calculations based on spin density functional theory are performed to study the spin-resolved elec- tronic properties of ZnO codoped with Cu and N. （Cu, N）-codoped ZnO exhibits magnetism, and the total magnetic mo- ment mainly originates from the p--d hybridization of Cu-N and Cu-O as well as p--p coupling interaction between N and O at the Fermi level. The Zn34Cu2035N1 favors energetically a ferromagnetic ground state due to the existence of stable Cu-N-Cu complex. These results imply that the （Cu, N）-codoped ZnO is a promising dilute magnetic semiconductor free of magnetic precipitates, which could broaden the horizon of currently known magnetic systems.展开更多
Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over tempera...Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films （Corbino discs）. It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.展开更多
基金Supported by the Natural Science Foundation of Chongqing City under Grant No AC4034, and Education Commission of Chongqing City under Grant No KJ050812.
文摘We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer （XRD） and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.
基金the National Natural Science Foundation of China under Grant Nos 51472038 and 51502030the Natural Science Foundation of Chongqing City under Grant Nos CSTC2016jcyjA and 2018jcyjA2923+1 种基金the Education Commission of Chongqing under Grant Nos KJ1500319,1501112 and KJ1600314the PhD Scientific Research Fund under Grant No 16XlB002
文摘Indium-doped ZnO(ZnO:In) films are deposited on quartz substrates by rf magnetron sputtering. The effects of post-annealing on structural, electrical, optical and Raman properties are investigated by x-ray diffraction,Raman scattering, Hall measurement and first-principles calculation. The results indicate that all of the ZnO:In films have excellent crystallinity with a preferred ZnO(002) orientation. It is found that the incorporation of In can dramatically increase the intensity of the 274 cm^(-1) Raman mode. However, both post-annealing treatment and increasing O_2 partial pressure in the process of preparing thin films can reduce the intensity of the 274 cm^(-1) mode or even eliminate it, and relax compressive stress of the ZnO:In film judged by analyzing the shifts of the(002) Bragg peaks and E_2(high) mode. Finally, the origin of the 274 cm^(-1) mode is inferred to be the vibration of Zn interstitial(Zni) defects, which play a crucial role in the high electron concentration and low resistivity of ZnO:In films annealed in an appropriate temperature range(450–600℃).
基金Project supported by the National Natural Science Foundation of China (Grant No. 61274128)the Natural Science Foundation of Chongqing City, China (Grant Nos. 2011BA4031 and 2013jjB0023)+1 种基金the Education Commission of Chongqing City, China (Grant No. KJ120608)the Chongqing Normal University,China (Grant No. 09XLS04)
文摘First-principles calculations based on spin density functional theory are performed to study the spin-resolved elec- tronic properties of ZnO codoped with Cu and N. （Cu, N）-codoped ZnO exhibits magnetism, and the total magnetic mo- ment mainly originates from the p--d hybridization of Cu-N and Cu-O as well as p--p coupling interaction between N and O at the Fermi level. The Zn34Cu2035N1 favors energetically a ferromagnetic ground state due to the existence of stable Cu-N-Cu complex. These results imply that the （Cu, N）-codoped ZnO is a promising dilute magnetic semiconductor free of magnetic precipitates, which could broaden the horizon of currently known magnetic systems.
基金Project supported by the Chongqing City Education Commission of China (Grant No. 040804)
文摘Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films （Corbino discs）. It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.
