在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上...在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上、下两层光波导芯部横截面尺寸分别为29μm×19μm和31μm×20μm;两层波导的输出光斑尺寸相互匹配;两层波导传输损耗分别为1.00±0.32 d B/cm和0.78±0.35 d B/cm;两层光波导之间的串扰在17.7d B左右。这种玻璃基片上的双层多模光波导可以使板级光互连的互连密度增大一倍,提高EOCB的性能。展开更多
针对目前国内集成光学技术的现状,对离子交换玻璃基集成光学技术进行了研究,目标是在建立起一个离子交换玻璃基集成光学制作平台,并在此基础上研制出低成本的光通信用光功分器。通过对玻璃基离子交换工艺进行的研究,包括电场辅助离子交...针对目前国内集成光学技术的现状,对离子交换玻璃基集成光学技术进行了研究,目标是在建立起一个离子交换玻璃基集成光学制作平台,并在此基础上研制出低成本的光通信用光功分器。通过对玻璃基离子交换工艺进行的研究,包括电场辅助离子交换、电场辅助退火、K^+离子掩膜工艺等,成功制备了具有低传输损耗和优良偏振相关损耗的掩埋式光波导;通过对基于 Y 分支器的光功分器结构的优化,成功研制了1×4、1×8、1×16、1×32的功分器,器件的主要性能指标已经"达到同类产品的国际水平"。此外,还进行了新型光学器件制作方面的研究。展开更多
Low-loss glass-based buried multimode waveguides are fabricated by using the field-assisted Ag＋-Na＋ ionexchange technique, and multimode optical power splitters are investigated. The measured loss of the multimode w...Low-loss glass-based buried multimode waveguides are fabricated by using the field-assisted Ag＋-Na＋ ionexchange technique, and multimode optical power splitters are investigated. The measured loss of the multimode waveguides is lower than 0.1 dB/cm, and the additional loss of the multimode optical power splitters is lower than 1.3 dB under the uniform splitting condition.展开更多
A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sen...A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.展开更多
The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated.The photocurrent,which is mainly related to surface-state absorption,defect-state absorption and/or...The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated.The photocurrent,which is mainly related to surface-state absorption,defect-state absorption and/or two-photon absorption,is more than 0.08µA/mm under 8 V reverse biasing and 0.75 mW irradiation.The responsivity of a silicon waveguide with length of 4500µm achieves 0.5 mA/W.Moreover,the enhancement of the photocurrent effect under the electric field is discussed.展开更多
Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8μm complementary metal oxide semiconductor foundry. The device configuration is based on a ...Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8μm complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 μm. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10 mA.展开更多
文摘在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上、下两层光波导芯部横截面尺寸分别为29μm×19μm和31μm×20μm;两层波导的输出光斑尺寸相互匹配;两层波导传输损耗分别为1.00±0.32 d B/cm和0.78±0.35 d B/cm;两层光波导之间的串扰在17.7d B左右。这种玻璃基片上的双层多模光波导可以使板级光互连的互连密度增大一倍,提高EOCB的性能。
文摘针对目前国内集成光学技术的现状,对离子交换玻璃基集成光学技术进行了研究,目标是在建立起一个离子交换玻璃基集成光学制作平台,并在此基础上研制出低成本的光通信用光功分器。通过对玻璃基离子交换工艺进行的研究,包括电场辅助离子交换、电场辅助退火、K^+离子掩膜工艺等,成功制备了具有低传输损耗和优良偏振相关损耗的掩埋式光波导;通过对基于 Y 分支器的光功分器结构的优化,成功研制了1×4、1×8、1×16、1×32的功分器,器件的主要性能指标已经"达到同类产品的国际水平"。此外,还进行了新型光学器件制作方面的研究。
文摘Low-loss glass-based buried multimode waveguides are fabricated by using the field-assisted Ag＋-Na＋ ionexchange technique, and multimode optical power splitters are investigated. The measured loss of the multimode waveguides is lower than 0.1 dB/cm, and the additional loss of the multimode optical power splitters is lower than 1.3 dB under the uniform splitting condition.
基金Supported by the Key Project of the National Natural Science Foundation of China under Grant No 60436020, and the Major State Basic Research Programme of China under Grant No 2007CB613405.
文摘A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.
基金by the Natural Basic Research Program of China under Grant No 2007CB613405the National Natural Science Foundation of China under Grant Nos 60977043 and 60808035.
文摘The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated.The photocurrent,which is mainly related to surface-state absorption,defect-state absorption and/or two-photon absorption,is more than 0.08µA/mm under 8 V reverse biasing and 0.75 mW irradiation.The responsivity of a silicon waveguide with length of 4500µm achieves 0.5 mA/W.Moreover,the enhancement of the photocurrent effect under the electric field is discussed.
基金Supported by the National Basic Research Program of China under Grant No 2007CB613405, the National Natural Science Foundation of China under Grant No 60676028, and the Science and Technology Program of Zhejiang Province under Grant No 2007C21022.
文摘Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8μm complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 μm. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10 mA.
