In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al_(0.22)Ga_(0.7)sN/C heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic f...In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al_(0.22)Ga_(0.7)sN/C heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al_(0.22)Ga_(0.7)sN layer on GaN is partially relaxed. It is thought that the misfit dislocations induced by the partially relaxed Al_(0.22)Ga_(0.7)sN layer modulate the distribution of the piezoelectric polarization-induced charges at the Al0.22Ga0.7sN/GaN heterointerface, and thus produce a strong modulation potential at the heterointerface. The strong modulation potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.展开更多
基金Supported by the Special Funds for Major State Basic Research Projects of China(G20000683)the National Natural Science Foundation of China under Grant Nos.69806006,69976014,and 69987001the National High Technology Research&Development Project of China.
文摘In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al_(0.22)Ga_(0.7)sN/C heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al_(0.22)Ga_(0.7)sN layer on GaN is partially relaxed. It is thought that the misfit dislocations induced by the partially relaxed Al_(0.22)Ga_(0.7)sN layer modulate the distribution of the piezoelectric polarization-induced charges at the Al0.22Ga0.7sN/GaN heterointerface, and thus produce a strong modulation potential at the heterointerface. The strong modulation potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.
