为了实现In Ga As探测器响应波段向可见增强,在传统的外延材料中加入一层In Ga As腐蚀阻挡层,制备了32×32元平面型In Ga As面阵探测器,采用机械抛光和化学湿法腐蚀相结合的方法,去除了In P衬底.结果表明,探测器的响应波段为0.5~1.7...为了实现In Ga As探测器响应波段向可见增强,在传统的外延材料中加入一层In Ga As腐蚀阻挡层,制备了32×32元平面型In Ga As面阵探测器,采用机械抛光和化学湿法腐蚀相结合的方法,去除了In P衬底.结果表明,探测器的响应波段为0.5~1.7μm,室温下在波长为500 nm处的量子效率约为16%,850 nm处量子效率约为54%,1 550 nm处量子效率约为91%.暗电流大小与衬底减薄之前基本保持一致.理论分析了材料参数对器件量子效率的影响,为进一步优化可见波段探测器的量子效率提供了依据.展开更多
The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structur...The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions.展开更多
文摘为了实现In Ga As探测器响应波段向可见增强,在传统的外延材料中加入一层In Ga As腐蚀阻挡层,制备了32×32元平面型In Ga As面阵探测器,采用机械抛光和化学湿法腐蚀相结合的方法,去除了In P衬底.结果表明,探测器的响应波段为0.5~1.7μm,室温下在波长为500 nm处的量子效率约为16%,850 nm处量子效率约为54%,1 550 nm处量子效率约为91%.暗电流大小与衬底减薄之前基本保持一致.理论分析了材料参数对器件量子效率的影响,为进一步优化可见波段探测器的量子效率提供了依据.
基金Project supported by the Talent Introduction Project of Nantong University,China(Grant No.03081055)the National Natural Science Foundation of China(Grant Nos.61874168 and 61505090)+4 种基金Top-notch Academic Programs Project of Jiangsu Higher Education Institutions,China(Grant No.PPZY2015B135)the Six Top Talents of Jiangsu Province,China(Grant No.2016-XCL-052)the Natural Science Foundation of Nantong University,China(Grant Nos.03080666and 14Z003)the Qing Lan Project of Jiangsu Province,ChinaKey NSF Program of Jiangsu Provincial Department of Education,China(Grant No.15KJA510004)
文摘The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions.
