研制了数字低电平系统(DLLRF)替换了合肥光源(HLS)原模拟系统,实现储存环高频腔的频率调谐和高频加速场的快速幅相反馈控制。该系统主要由模拟信号变频和基于FPGA的数字处理两大功能模块构成。经过离线和在线调试,DLLRF闭环控制下高频...研制了数字低电平系统(DLLRF)替换了合肥光源(HLS)原模拟系统,实现储存环高频腔的频率调谐和高频加速场的快速幅相反馈控制。该系统主要由模拟信号变频和基于FPGA的数字处理两大功能模块构成。经过离线和在线调试,DLLRF闭环控制下高频场的无载幅相稳定度达到±0.1%和±0.1°。带束流运行后进一步优化了环路参数,储存环最高流强达到460 m A,并成功实现了300 m A TOP-OFF运行模式,高频场的载束幅相稳定度达到±0.2%和±0.2°。展开更多
The low level radio frequency(LLRF) system for booster accelerator at Shanghai Synchrotron Radiation Facility(SSRF) was upgraded by a digital controller based on field programmable gate array(FPGA) technology.Paramete...The low level radio frequency(LLRF) system for booster accelerator at Shanghai Synchrotron Radiation Facility(SSRF) was upgraded by a digital controller based on field programmable gate array(FPGA) technology.Parameters of voltage, frequency and field flatness in the two 5-cell cavities are controlled to meet the requirements of booster. In this article, the ramping curve of cavity voltage, amplitude and phase control loop with vector sum of the two 5-cell cavities, tuning loop and field flatness loop are analyzed and discussed in detail.A different method in tuning loop is adopted due to the limitations of ADC channels. The function realizes energy ramping of electron beam from 150 Me V to 3.5 Ge V with a repetition rate of 2 Hz. With the new LLRF controller, the phase stability at ramping mode in 10 hours long operation is improved from ±1.5°(RMS) with open loop to ±0.15°(RMS) with close loop, while the detuning phase and field flatness are maintained to within ±2°and ±1%, respectively.展开更多
Surface preparation is an important processing in production procedures of superconducting niobium cavities,deciding whether the performance of the niobium cavities can meet the specifications. A series of surface pre...Surface preparation is an important processing in production procedures of superconducting niobium cavities,deciding whether the performance of the niobium cavities can meet the specifications. A series of surface preparation methods and relevant apparatuses have been constructed at Shanghai Institute of Applied Physics(SINAP) and the standard procedures of cavity processing were established and successfully applied to different types of cavities. With standard surface preparation procedures on the 500 MHz 5-cell niobium cavity, the cavity accelerating voltage at T = 4.2 K reached 7.5 MV while its quality factor was still higher than 1 × 109.The accelerating gradient of the IMP-HWR010 cavity reached 4.9 MV/m with the quality factor of better than3 × 108 at 4.2 K.展开更多
文摘研制了数字低电平系统(DLLRF)替换了合肥光源(HLS)原模拟系统,实现储存环高频腔的频率调谐和高频加速场的快速幅相反馈控制。该系统主要由模拟信号变频和基于FPGA的数字处理两大功能模块构成。经过离线和在线调试,DLLRF闭环控制下高频场的无载幅相稳定度达到±0.1%和±0.1°。带束流运行后进一步优化了环路参数,储存环最高流强达到460 m A,并成功实现了300 m A TOP-OFF运行模式,高频场的载束幅相稳定度达到±0.2%和±0.2°。
基金Supported by the National Natural Science Foundation of China(No.11335014)
文摘The low level radio frequency(LLRF) system for booster accelerator at Shanghai Synchrotron Radiation Facility(SSRF) was upgraded by a digital controller based on field programmable gate array(FPGA) technology.Parameters of voltage, frequency and field flatness in the two 5-cell cavities are controlled to meet the requirements of booster. In this article, the ramping curve of cavity voltage, amplitude and phase control loop with vector sum of the two 5-cell cavities, tuning loop and field flatness loop are analyzed and discussed in detail.A different method in tuning loop is adopted due to the limitations of ADC channels. The function realizes energy ramping of electron beam from 150 Me V to 3.5 Ge V with a repetition rate of 2 Hz. With the new LLRF controller, the phase stability at ramping mode in 10 hours long operation is improved from ±1.5°(RMS) with open loop to ±0.15°(RMS) with close loop, while the detuning phase and field flatness are maintained to within ±2°and ±1%, respectively.
基金Supported by the National Natural Science Foundation of China(No.11205233)
文摘Surface preparation is an important processing in production procedures of superconducting niobium cavities,deciding whether the performance of the niobium cavities can meet the specifications. A series of surface preparation methods and relevant apparatuses have been constructed at Shanghai Institute of Applied Physics(SINAP) and the standard procedures of cavity processing were established and successfully applied to different types of cavities. With standard surface preparation procedures on the 500 MHz 5-cell niobium cavity, the cavity accelerating voltage at T = 4.2 K reached 7.5 MV while its quality factor was still higher than 1 × 109.The accelerating gradient of the IMP-HWR010 cavity reached 4.9 MV/m with the quality factor of better than3 × 108 at 4.2 K.
