Since defects such as traps and oxygen vacancies exist in dielectrics,it is difficult to fabricate a high-performance MoS_(2)field-effect transistor(FET)using atomic layer deposition(ALD)Al_(2)O_(3)as the gate dielect...Since defects such as traps and oxygen vacancies exist in dielectrics,it is difficult to fabricate a high-performance MoS_(2)field-effect transistor(FET)using atomic layer deposition(ALD)Al_(2)O_(3)as the gate dielectric layer.In this paper,NH_(3)in situ doping,a process treatment approach during ALD growth of Al_(2)O_(3),is used to decrease these defects for better device characteristics.MoS_(2)FET has been well fabricated with this technique and the effect of different NH_(3)in situ doping sequences in the growth cycle has been investigated in detail.Compared with counterparts,those devices with NH_(3)in situ doping demonstrate obvious performance enhancements:Ion/Ioff is improved by one order of magnitude,from 1.33×10^(5)to 3.56×10^(6),the threshold voltage shifts from-0.74 V to-0.12 V and a small subthreshold swing of 105 m V/dec is achieved.The improved MoS_(2)FET performance is attributed to nitrogen doping by the introduction of NH_(3)during the Al_(2)O_(3)ALD growth process,which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al_(2)O_(3)layer.Furthermore,the MoS_(2)FET processed by in situ NH_(3)doping after the Al and O precursor filling cycles demonstrates the best performance;this may be because the final NH_(3)doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS_(2)channel.The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS_(2)devices.展开更多
基金the National Natural Science Foundation of China(Grant Nos.61774168 and 11764008)the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences。
文摘Since defects such as traps and oxygen vacancies exist in dielectrics,it is difficult to fabricate a high-performance MoS_(2)field-effect transistor(FET)using atomic layer deposition(ALD)Al_(2)O_(3)as the gate dielectric layer.In this paper,NH_(3)in situ doping,a process treatment approach during ALD growth of Al_(2)O_(3),is used to decrease these defects for better device characteristics.MoS_(2)FET has been well fabricated with this technique and the effect of different NH_(3)in situ doping sequences in the growth cycle has been investigated in detail.Compared with counterparts,those devices with NH_(3)in situ doping demonstrate obvious performance enhancements:Ion/Ioff is improved by one order of magnitude,from 1.33×10^(5)to 3.56×10^(6),the threshold voltage shifts from-0.74 V to-0.12 V and a small subthreshold swing of 105 m V/dec is achieved.The improved MoS_(2)FET performance is attributed to nitrogen doping by the introduction of NH_(3)during the Al_(2)O_(3)ALD growth process,which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al_(2)O_(3)layer.Furthermore,the MoS_(2)FET processed by in situ NH_(3)doping after the Al and O precursor filling cycles demonstrates the best performance;this may be because the final NH_(3)doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS_(2)channel.The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS_(2)devices.
