A 50-60 V class ultralow specific on-resistance(R_(on,sp))trench power MOSFET is proposed.The structure is characterized by an n^(+)-layer which is buried on the top surface of the p-substrate and connected to the dra...A 50-60 V class ultralow specific on-resistance(R_(on,sp))trench power MOSFET is proposed.The structure is characterized by an n^(+)-layer which is buried on the top surface of the p-substrate and connected to the drain n^(+)-region.The low-resistance n^(+)-layer shortens the motion-path in high-resistance n^(-) drift region for the carriers,and therefore,reduces the R_(on,sp) in the on-state.Electrical characteristics for the proposed power MOSFET are analyzed and discussed.The 50-60 V class breakdown voltages(V_(B))with R_(on,sp) less than 0.35 mΩ·cm^(2) are obtained.Compared with several power MOSFETs,the proposed power MOSFET has a significantly optimized dependence of R_(on,sp) on VB.展开更多
基金Supported by the Fundamental Research Funds for the Central Universities(No CDJZR12160003).
文摘A 50-60 V class ultralow specific on-resistance(R_(on,sp))trench power MOSFET is proposed.The structure is characterized by an n^(+)-layer which is buried on the top surface of the p-substrate and connected to the drain n^(+)-region.The low-resistance n^(+)-layer shortens the motion-path in high-resistance n^(-) drift region for the carriers,and therefore,reduces the R_(on,sp) in the on-state.Electrical characteristics for the proposed power MOSFET are analyzed and discussed.The 50-60 V class breakdown voltages(V_(B))with R_(on,sp) less than 0.35 mΩ·cm^(2) are obtained.Compared with several power MOSFETs,the proposed power MOSFET has a significantly optimized dependence of R_(on,sp) on VB.
