为方便对OLED器件的各项性能进行测试,研发了一种OLED器件光电性能集成测试系统,实现了在同一个软件下的OLED器件的电压、电流、亮度、光谱、色坐标和寿命等特性的集成测试。介绍了计算机与各测试设备的通信方法,通过计算机控制测量仪器...为方便对OLED器件的各项性能进行测试,研发了一种OLED器件光电性能集成测试系统,实现了在同一个软件下的OLED器件的电压、电流、亮度、光谱、色坐标和寿命等特性的集成测试。介绍了计算机与各测试设备的通信方法,通过计算机控制测量仪器对OLED器件进行测量。使用了Microsoft Visual 2005开发工具,利用MFC(Microsoft Foundation Classes)开发出了图形用户界面下的应用程序。利用TeeChart(西班牙Steema公司研发的图表控件)控件实现了OLED器件性能特性曲线的实时动态显示,并能够对不同器件的测试结果进行性能曲线的对比。编写了色坐标助手软件,实现对测试软件测试的光谱数据的分析显示功能。展开更多
Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performanc...Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.展开更多
文摘为方便对OLED器件的各项性能进行测试,研发了一种OLED器件光电性能集成测试系统,实现了在同一个软件下的OLED器件的电压、电流、亮度、光谱、色坐标和寿命等特性的集成测试。介绍了计算机与各测试设备的通信方法,通过计算机控制测量仪器对OLED器件进行测量。使用了Microsoft Visual 2005开发工具,利用MFC(Microsoft Foundation Classes)开发出了图形用户界面下的应用程序。利用TeeChart(西班牙Steema公司研发的图表控件)控件实现了OLED器件性能特性曲线的实时动态显示,并能够对不同器件的测试结果进行性能曲线的对比。编写了色坐标助手软件,实现对测试软件测试的光谱数据的分析显示功能。
基金Supported by the National Natural Science Foundation of China under Grant No 61177028
文摘Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
