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CCD质子辐照损伤效应的三维蒙特卡罗模拟 被引量:4
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作者 薛院院 王祖军 +7 位作者 刘静 何宝平 姚志斌 刘敏波 盛江坤 马武英 董观涛 金军山 《强激光与粒子束》 EI CAS CSCD 北大核心 2018年第4期83-88,共6页
针对空间质子诱发CCD性能退化问题,开展了CCD质子辐照效应的三维蒙特卡罗模拟研究。采用三维蒙特卡罗软件Geant4模拟计算了不同能量质子在Si和SiO_2中的射程及Bragg峰,分析了不同能量质子在材料中能量沉积的过程,并将模拟结果与相关数... 针对空间质子诱发CCD性能退化问题,开展了CCD质子辐照效应的三维蒙特卡罗模拟研究。采用三维蒙特卡罗软件Geant4模拟计算了不同能量质子在Si和SiO_2中的射程及Bragg峰,分析了不同能量质子在材料中能量沉积的过程,并将模拟结果与相关数据进行对比,模拟误差在5%以内。根据质子与材料相互作用的物理过程,选取了合适的Lindhard分离函数,添加合适的物理过程,模拟计算了不同能量质子在SiO_2中的电离能量损失和Si中的非电离能量损失,并将结果与国外相关数据进行对比。根据CCD的生产工艺参数,建立了单个像元的三维模拟模型,确定了质子辐照损伤的灵敏体积,模拟计算了不同能量质子在像元灵敏体积内的电离能量沉积与非电离能量沉积,分析了CCD不同能量质子的辐照损伤差异产生的机理。结合粒子输运计算结果与CCD质子辐照实验结果,分析了质子辐照诱发CCD辐射敏感参数退化的物理机制。 展开更多
关键词 电荷耦合器件(CCD) 质子 GEANT4 电离能量沉积 非电离能量沉积
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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source 被引量:2
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作者 薛院院 王祖军 +9 位作者 陈伟 郭晓强 姚志斌 何宝平 聂栩 赖善坤 黄港 盛江坤 马武英 缑石龙 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期435-442,共8页
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi... Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal. 展开更多
关键词 displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) MECHANISMS technology computer-aided design(TCAD)
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Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source
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作者 Rui Xu Zu-Jun Wang +7 位作者 Yuan-Yuan Xue Hao Ning Min-Bo Liu Xiao-Qiang Guo Zhi-Bin Yao Jiang-Kun Sheng Wu-Ying Ma Guan-Tao Dong 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第1期307-310,共4页
Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The perfor... Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed. 展开更多
关键词 China Spallation Neutron Source OPTOCOUPLER neutron radiation displacement damage current transfer ratio
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