Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method f...Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.展开更多
A new detection system in scanning electron microscope,which filters in energy and detects the backscattered electrons close to the microscope axis,is described.This technique ameliorates the dependence of the back.sc...A new detection system in scanning electron microscope,which filters in energy and detects the backscattered electrons close to the microscope axis,is described.This technique ameliorates the dependence of the back.scat tering coefficient on atomic number,and suppresses effectively the relief contrast at the same time.Therefore this new method is very suitable to the composition analysis.展开更多
基金the National Nat-ural Science Foundation of China(Grant Nos.12025503,U23B2072,12074293,and 12275198)the Funda-mental Research Funds for the Center Universities(Grant Nos.2042024kf0001 and 2042023kf0196).
文摘Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.
基金Supported by the National Natural Science Foundation of China under Grant No.10045001.
文摘A new detection system in scanning electron microscope,which filters in energy and detects the backscattered electrons close to the microscope axis,is described.This technique ameliorates the dependence of the back.scat tering coefficient on atomic number,and suppresses effectively the relief contrast at the same time.Therefore this new method is very suitable to the composition analysis.