We use the first-principles calculation method to study the interface effect on the structure and electronic properties of graphdiyne adsorbed on the conventional substrates of rough SiO2 and flat h-BN. For the SiO2 s...We use the first-principles calculation method to study the interface effect on the structure and electronic properties of graphdiyne adsorbed on the conventional substrates of rough SiO2 and flat h-BN. For the SiO2 substrate, we consider all possible surface terminations, including Si termination with dangling bond, Si terminations with full and partial hydrogenation, and oxygen terminations with dimerization and hydrogenation. We find that graphdiyne can maintain a flat geometry when absorbed on both h-BN and SiO2 substrates except for the Si termination with partial hydrogenation（Si-H） SiO2 substrate. A lack of surface corrugation in graphdiyne on the substrates, which may help maintain its electronic band character, is due to the weak Van der Waals interaction between graphdiyne and the substrate. Si-H SiO2 should be avoided in applications since a covalent type bonding between graphdiyne and SiO2 will totally vary the band structure of graphdiyne.Interestingly, the oxygen termination with dimerization SiO2 substrate has spontaneous p-type doping on graphdiyne via interlayer charge transfer even in the absence of extrinsic impurities in the substrate. Our result may provide a stimulus for future experiments to unveil its potential in electronic device applications.展开更多
Two-dimensional(2D)semiconductors isoelectronic to phosphorene have been drawing much attention recently due to their promising applications for next-generation(opt)electronics.This family of 2D materials contains mor...Two-dimensional(2D)semiconductors isoelectronic to phosphorene have been drawing much attention recently due to their promising applications for next-generation(opt)electronics.This family of 2D materials contains more than 400members,including(a)elemental group-V materials,(b)binary III–VII and IV–VI compounds,(c)ternary III–VI–VII and IV–V–VII compounds,making materials design with targeted functionality unprecedentedly rich and extremely challenging.To shed light on rational functionality design with this family of materials,we systemically explore their fundamental band gaps and alignments using hybrid density functional theory(DFT)in combination with machine learning.First,calculations are performed using both the Perdew–Burke–Ernzerhof exchange–correlation functional within the generalgradient-density approximation(GGA-PBE)and Heyd–Scuseria–Ernzerhof hybrid functional(HSE)as a reference.We find this family of materials share similar crystalline structures,but possess largely distributed band-gap values ranging approximately from 0 eV to 8 eV.Then,we apply machine learning methods,including linear regression(LR),random forest regression(RFR),and support vector machine regression(SVR),to build models for the prediction of electronic properties.Among these models,SVR is found to have the best performance,yielding the root mean square error(RMSE)less than 0.15 eV for the predicted band gaps,valence-band maximums(VBMs),and conduction-band minimums(CBMs)when both PBE results and elemental information are used as features.Thus,we demonstrate that the machine learning models are universally suitable for screening 2D isoelectronic systems with targeted functionality,and especially valuable for the design of alloys and heterogeneous systems.展开更多
Unusual quadratic dispersion of flexural vibrational mode and red-shift of Raman shift of in-plane mode with increas- ing layer-number are quite common and interesting in low-dimensional materials, but their physical ...Unusual quadratic dispersion of flexural vibrational mode and red-shift of Raman shift of in-plane mode with increas- ing layer-number are quite common and interesting in low-dimensional materials, but their physical origins still remain open questions. Combining ab initio density functional theory calculations with the empirical force-constant model, we study the lattice dynamics of two typical two-dimensional （2D） systems, few-layer h-BN and indium iodide （InI）. We found that the unusual quadratic dispersion of flexural mode frequency on wave vector may be comprehended based on the com- petition between atomic interactions of different neighbors. Long-range interaction plays an essential role in determining the dynamic stability of the 2D systems. The frequency red-shift of in-plane Raman-active mode from monolayer to bulk arises mainly from the reduced long-range interaction due to the increasing screening effect.展开更多
Two-dimensional (2D) crystals are known to have no bulk but only surfaces and edges, thus leading to unprecedented properties thanks to the quantum confinements. For half a century, the compression of z-dimension has ...Two-dimensional (2D) crystals are known to have no bulk but only surfaces and edges, thus leading to unprecedented properties thanks to the quantum confinements. For half a century, the compression of z-dimension has been attempted through ultra-thin films by such as molecular beam epitaxy. However, the revisiting of thin films becomes popular again, in another fashion of the isolation of freestanding 2D layers out of van der Waals (vdW) bulk compounds. To date, nearly two decades after the nativity of the great graphene venture, researchers are still fascinated about flattening, into the atomic limit, all kinds of crystals, whether or not they are vdW. In this introductive review, we will summarize some recent experimental progresses on 2D electronic systems, and briefly discuss their revolutionizing capabilities for the implementation of future nanostructures and nanoelectronics.展开更多
Using ab initio density functional theory calculations, we explore the three most stable structural phases, namely, α,β, and cubic(c) phases, of two-dimensional(2D) antimonene, as well as its isoelectronic counterpa...Using ab initio density functional theory calculations, we explore the three most stable structural phases, namely, α,β, and cubic(c) phases, of two-dimensional(2D) antimonene, as well as its isoelectronic counterparts SnTe and InI. We find that the band gap increases monotonically from Sb to SnTe to InI along with an increase in ionicity, independent of the structural phases. The band gaps of this material family cover the entire visible-light energy spectrum, ranging from 0.26 eV to 3.37 eV, rendering them promising candidates for optoelectronic applications. Meanwhile, band-edge positions of these materials are explored and all three types of band alignments can be achieved through properly combining antimonene with its isoelectronic counterparts to form heterostructures. The richness in electronic properties for this isoelectronic material family sheds light on possibilities to tailor the fundamental band gap of antimonene via lateral alloying or forming vertical heterostructures.展开更多
Transition-metal chalcogenide nanowires(TMCN) as a viable candidate for nanoscale applications have been attracting much attention for the last few decades. Starting from the rigid building block of M6 octahedra(M = t...Transition-metal chalcogenide nanowires(TMCN) as a viable candidate for nanoscale applications have been attracting much attention for the last few decades. Starting from the rigid building block of M6 octahedra(M = transition metal),depending on the way of connection between M6 and decoration by chalcogenide atoms, multiple types of extended TMCN nanowires can be constructed based on some basic rules of backbone construction proposed here. Note that the well-known Chevrel-phase based M6X6 and M6X9(X = chalcogenide atom) nanowires, which are among our proposed structures, have been successfully synthesized by experiment and well studied. More interestingly, based on the construction principles, we predict three new structural phases(the cap, edge, and C&E phases) of Mo5S4, one of which(the edge phase) has been obtained by top-down electron beam lithography on two-dimensional MoS2, and the C&E phase is yet to be synthesized but appears more stable than the edge phase. The stability of the new phases of Mo5S4 is further substantiated by crystal orbital overlapping population(COOP), phonon dispersion relation, and thermodynamic calculation. The barrier of the structural transition between different phases of Mo5S4 shows that it is very likely to realize an conversion from the experimentally achieved structure to the most stable C&E phase. The calculated electronic structure shows an interesting band nesting between valence and conduction bands of the C&E Mo5S4 phase, suggesting that such a nanowire structure can be well suitable for optoelectronic sensor applications.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51331006)the Key Research Program of Chinese Academy of Sciences(Grant No.KGZD-EW-T06)the IMR SYNL-Young Merit Scholars Research Grant,China
文摘We use the first-principles calculation method to study the interface effect on the structure and electronic properties of graphdiyne adsorbed on the conventional substrates of rough SiO2 and flat h-BN. For the SiO2 substrate, we consider all possible surface terminations, including Si termination with dangling bond, Si terminations with full and partial hydrogenation, and oxygen terminations with dimerization and hydrogenation. We find that graphdiyne can maintain a flat geometry when absorbed on both h-BN and SiO2 substrates except for the Si termination with partial hydrogenation（Si-H） SiO2 substrate. A lack of surface corrugation in graphdiyne on the substrates, which may help maintain its electronic band character, is due to the weak Van der Waals interaction between graphdiyne and the substrate. Si-H SiO2 should be avoided in applications since a covalent type bonding between graphdiyne and SiO2 will totally vary the band structure of graphdiyne.Interestingly, the oxygen termination with dimerization SiO2 substrate has spontaneous p-type doping on graphdiyne via interlayer charge transfer even in the absence of extrinsic impurities in the substrate. Our result may provide a stimulus for future experiments to unveil its potential in electronic device applications.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFA0206301)。
文摘Two-dimensional(2D)semiconductors isoelectronic to phosphorene have been drawing much attention recently due to their promising applications for next-generation(opt)electronics.This family of 2D materials contains more than 400members,including(a)elemental group-V materials,(b)binary III–VII and IV–VI compounds,(c)ternary III–VI–VII and IV–V–VII compounds,making materials design with targeted functionality unprecedentedly rich and extremely challenging.To shed light on rational functionality design with this family of materials,we systemically explore their fundamental band gaps and alignments using hybrid density functional theory(DFT)in combination with machine learning.First,calculations are performed using both the Perdew–Burke–Ernzerhof exchange–correlation functional within the generalgradient-density approximation(GGA-PBE)and Heyd–Scuseria–Ernzerhof hybrid functional(HSE)as a reference.We find this family of materials share similar crystalline structures,but possess largely distributed band-gap values ranging approximately from 0 eV to 8 eV.Then,we apply machine learning methods,including linear regression(LR),random forest regression(RFR),and support vector machine regression(SVR),to build models for the prediction of electronic properties.Among these models,SVR is found to have the best performance,yielding the root mean square error(RMSE)less than 0.15 eV for the predicted band gaps,valence-band maximums(VBMs),and conduction-band minimums(CBMs)when both PBE results and elemental information are used as features.Thus,we demonstrate that the machine learning models are universally suitable for screening 2D isoelectronic systems with targeted functionality,and especially valuable for the design of alloys and heterogeneous systems.
基金Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC,China(Grant No.U1537204)the National Key Research and Development Program of China(Grant No.2017YFA0206301)the National Natural Science Foundation of China(Grant No.51702146)
文摘Unusual quadratic dispersion of flexural vibrational mode and red-shift of Raman shift of in-plane mode with increas- ing layer-number are quite common and interesting in low-dimensional materials, but their physical origins still remain open questions. Combining ab initio density functional theory calculations with the empirical force-constant model, we study the lattice dynamics of two typical two-dimensional （2D） systems, few-layer h-BN and indium iodide （InI）. We found that the unusual quadratic dispersion of flexural mode frequency on wave vector may be comprehended based on the com- petition between atomic interactions of different neighbors. Long-range interaction plays an essential role in determining the dynamic stability of the 2D systems. The frequency red-shift of in-plane Raman-active mode from monolayer to bulk arises mainly from the reduced long-range interaction due to the increasing screening effect.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974357 and U1932151)the State Key Research Development Program of China(Grant No.2019YFA0307800)+1 种基金the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices,China(Grant No.KF201816)the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC,China(Grant No.U1537204).
文摘Two-dimensional (2D) crystals are known to have no bulk but only surfaces and edges, thus leading to unprecedented properties thanks to the quantum confinements. For half a century, the compression of z-dimension has been attempted through ultra-thin films by such as molecular beam epitaxy. However, the revisiting of thin films becomes popular again, in another fashion of the isolation of freestanding 2D layers out of van der Waals (vdW) bulk compounds. To date, nearly two decades after the nativity of the great graphene venture, researchers are still fascinated about flattening, into the atomic limit, all kinds of crystals, whether or not they are vdW. In this introductive review, we will summarize some recent experimental progresses on 2D electronic systems, and briefly discuss their revolutionizing capabilities for the implementation of future nanostructures and nanoelectronics.
基金Project supported by the National Natural Science Foundation of China(Grant No.51702146)the College Students’Innovation and Entrepreneurship Projects,China(Grant No.201710148000072)Liaoning Province Doctor Startup Fund,China(Grant No.201601325)。
文摘Using ab initio density functional theory calculations, we explore the three most stable structural phases, namely, α,β, and cubic(c) phases, of two-dimensional(2D) antimonene, as well as its isoelectronic counterparts SnTe and InI. We find that the band gap increases monotonically from Sb to SnTe to InI along with an increase in ionicity, independent of the structural phases. The band gaps of this material family cover the entire visible-light energy spectrum, ranging from 0.26 eV to 3.37 eV, rendering them promising candidates for optoelectronic applications. Meanwhile, band-edge positions of these materials are explored and all three types of band alignments can be achieved through properly combining antimonene with its isoelectronic counterparts to form heterostructures. The richness in electronic properties for this isoelectronic material family sheds light on possibilities to tailor the fundamental band gap of antimonene via lateral alloying or forming vertical heterostructures.
基金Project supported by the National Natural Science Foundation of China(Grant No.51702146)the College Students’ Innovation and Entrepreneurship Projects,China(Grant No.201710148000072)Liaoning Province Doctor Startup Fund,China(Grant No.201601325)
文摘Transition-metal chalcogenide nanowires(TMCN) as a viable candidate for nanoscale applications have been attracting much attention for the last few decades. Starting from the rigid building block of M6 octahedra(M = transition metal),depending on the way of connection between M6 and decoration by chalcogenide atoms, multiple types of extended TMCN nanowires can be constructed based on some basic rules of backbone construction proposed here. Note that the well-known Chevrel-phase based M6X6 and M6X9(X = chalcogenide atom) nanowires, which are among our proposed structures, have been successfully synthesized by experiment and well studied. More interestingly, based on the construction principles, we predict three new structural phases(the cap, edge, and C&E phases) of Mo5S4, one of which(the edge phase) has been obtained by top-down electron beam lithography on two-dimensional MoS2, and the C&E phase is yet to be synthesized but appears more stable than the edge phase. The stability of the new phases of Mo5S4 is further substantiated by crystal orbital overlapping population(COOP), phonon dispersion relation, and thermodynamic calculation. The barrier of the structural transition between different phases of Mo5S4 shows that it is very likely to realize an conversion from the experimentally achieved structure to the most stable C&E phase. The calculated electronic structure shows an interesting band nesting between valence and conduction bands of the C&E Mo5S4 phase, suggesting that such a nanowire structure can be well suitable for optoelectronic sensor applications.
