A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs i...A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs islands are asymmetrical along the two<110>directions on the(001)growth plane.Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the Ⅲ-Ⅳ compound semiconductors.展开更多
4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent ...4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69576026。
文摘A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs islands are asymmetrical along the two<110>directions on the(001)growth plane.Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the Ⅲ-Ⅳ compound semiconductors.
文摘4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.
