A 150-nm-thick CaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber, and a quantum efficiency （QE） curve of the negative electron affinity trans...A 150-nm-thick CaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber, and a quantum efficiency （QE） curve of the negative electron affinity transmission-mode （t-mode） of the GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5 ×104 cm. s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of CaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 60871012)the National Key Laboratory of Science and Technology Foundation on Low-Light-Level Night Vision,China (Grant No. J20110104)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11 0238)
文摘A 150-nm-thick CaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber, and a quantum efficiency （QE） curve of the negative electron affinity transmission-mode （t-mode） of the GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5 ×104 cm. s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of CaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.
