Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XP...Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.展开更多
A compact mirror-like ECR (electron cyclotron resonance) Plasma source for the ionosphere environment simulator was described for the fort time in China. The Overall sources system was composed of a 200 W 2.45 GHz mic...A compact mirror-like ECR (electron cyclotron resonance) Plasma source for the ionosphere environment simulator was described for the fort time in China. The Overall sources system was composed of a 200 W 2.45 GHz microwave source, a coastal 3A./4 TEM-mode microwave resonance applicator, column and cylindrical Nd-Fe-P magnets, a quartz bell-shaped discharge chamber, a gas inlet system and a plasma-diffusing bore. The preliminary experiment demonstrated that ambi-polar diffusion plasma stream into the simulator (-500 mm long) formed an environment with following parameters: a plasma density ne of 104 cm-3 - 106 cm-3, an electron temperature Te < 5 eV at a pressure P of 10-1 Pa-10-3 Pa, a Plasma uniformity of > 80% over the experimental target with a 160-mm-in-diameter, satisfying primarily the requirement of simulating in a severe ionosphere environment.展开更多
文摘Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.
文摘A compact mirror-like ECR (electron cyclotron resonance) Plasma source for the ionosphere environment simulator was described for the fort time in China. The Overall sources system was composed of a 200 W 2.45 GHz microwave source, a coastal 3A./4 TEM-mode microwave resonance applicator, column and cylindrical Nd-Fe-P magnets, a quartz bell-shaped discharge chamber, a gas inlet system and a plasma-diffusing bore. The preliminary experiment demonstrated that ambi-polar diffusion plasma stream into the simulator (-500 mm long) formed an environment with following parameters: a plasma density ne of 104 cm-3 - 106 cm-3, an electron temperature Te < 5 eV at a pressure P of 10-1 Pa-10-3 Pa, a Plasma uniformity of > 80% over the experimental target with a 160-mm-in-diameter, satisfying primarily the requirement of simulating in a severe ionosphere environment.
