In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and r...In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.展开更多
The junction temperature of red,green and blue high power light emitting diodes(LEDs)is measured by using the emission peak shift method and the forward voltage method.Both the emission peak shift and the forward volt...The junction temperature of red,green and blue high power light emitting diodes(LEDs)is measured by using the emission peak shift method and the forward voltage method.Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature.The linear coefficients of the red,green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/℃ and from 1.33 to 3.59 mV/℃,respectively.Compared with the forward voltage method,the peak shift method is almost independent of bias current and sample difference.The variation of the slopes is less than 2%for the peak shift method and larger than 30%for the forward voltage method,when the LEDs are driven by different bias currents.It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions.展开更多
基金Project supported by the National Science Foundation of China under Contract Number NSFC(60636020,60676034,60706007)Project supported by CAS Innovation ProgramNational Science Foundation of Jilin Province(20080335,20086011)~~
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403101)the National Natural Science Foundation of China(Grant Nos.61404114,61504119,and 11004170)+1 种基金the China Postdoctoral Science Foundation(Grant No.2017M611923)the Jiangsu Planned Projects for Postdoctoral Research Funds,China(Grant No.1701067B)
文摘In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CB925604,2011CB922004the Natural Science Foundation of China(10990103,60906058)+1 种基金Shanghai Committee of Science and Technology(09DJ1400700,11DZ1140900)China Postdoctoral Science Foundation(20110490075).
文摘The junction temperature of red,green and blue high power light emitting diodes(LEDs)is measured by using the emission peak shift method and the forward voltage method.Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature.The linear coefficients of the red,green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/℃ and from 1.33 to 3.59 mV/℃,respectively.Compared with the forward voltage method,the peak shift method is almost independent of bias current and sample difference.The variation of the slopes is less than 2%for the peak shift method and larger than 30%for the forward voltage method,when the LEDs are driven by different bias currents.It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions.
