Molybdenum disulfide(MoS_(2)) is an emerging two-dimensional(2D) semiconductor and has great potential for highend applications beyond the traditional silicon-based electronics. Compared to the monolayers, multilayer ...Molybdenum disulfide(MoS_(2)) is an emerging two-dimensional(2D) semiconductor and has great potential for highend applications beyond the traditional silicon-based electronics. Compared to the monolayers, multilayer MoS_(2) has improved electron mobility and current density, and therefore provides a more promising platform in terms of thin-film transistors, flexible electronic devices, etc. However, the synthesis of large-area, high-quality multilayer MoS_(2) films with controlled layer number remains a challenge. Here, we develop a two-step oxygen-assisted chemical vapor deposition(OA-CVD) methodology for the synthesis of 4-inch MoS_(2) films from monolayer to trilayer on sapphire substrates. The influence of critical growth parameters on the growth of multilayer MoS_(2) is systematically explored, such as the evaporation temperature of MoO_(3) and the flow rate of O_(2). Flexible field-effect transistor(FET) devices fabricated from bilayer/trilayer MoS_(2) show substantial improvements in mobility compared with flexible FETs based on monolayer films.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1202900)the National Natural Science Foundation of China (Grant Nos. 12422402, 61888102, 12274447, and 62204166)+1 种基金Chinese Academy of Sciences Strategic Priority Research Program (Grant No. XDB067020302)Guangdong Major Project of Basic and Applied Basic Research (Grant No. 2021B0301030002)。
文摘Molybdenum disulfide(MoS_(2)) is an emerging two-dimensional(2D) semiconductor and has great potential for highend applications beyond the traditional silicon-based electronics. Compared to the monolayers, multilayer MoS_(2) has improved electron mobility and current density, and therefore provides a more promising platform in terms of thin-film transistors, flexible electronic devices, etc. However, the synthesis of large-area, high-quality multilayer MoS_(2) films with controlled layer number remains a challenge. Here, we develop a two-step oxygen-assisted chemical vapor deposition(OA-CVD) methodology for the synthesis of 4-inch MoS_(2) films from monolayer to trilayer on sapphire substrates. The influence of critical growth parameters on the growth of multilayer MoS_(2) is systematically explored, such as the evaporation temperature of MoO_(3) and the flow rate of O_(2). Flexible field-effect transistor(FET) devices fabricated from bilayer/trilayer MoS_(2) show substantial improvements in mobility compared with flexible FETs based on monolayer films.
