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Electronic structure and spatial inhomogeneity of iron-based superconductor FeS 被引量:1
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作者 Chengwei Wang Meixiao Wang +12 位作者 Juan Jiang Haifeng Yang Lexian Yang Wujun Shi Xiaofang Lai Sung-Kwan Mo Alexei Barinov Binghai Yan Zhi Liu Fuqiang Huang Jinfeng Jia Zhongkai Liu Yulin Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第4期110-115,共6页
Iron-based superconductor family FeX(X=S,Se,Te)has been one of the research foci in physics and material science due to their record-breaking superconducting temperature(FeSe film)and rich physical phenomena.Recently,... Iron-based superconductor family FeX(X=S,Se,Te)has been one of the research foci in physics and material science due to their record-breaking superconducting temperature(FeSe film)and rich physical phenomena.Recently,FeS,the least studied Fe X compound(due to the difficulty in synthesizing high quality macroscopic crystals)attracted much attention because of its puzzling superconducting pairing symmetry.In this work,combining scanning tunneling microscopy and angle resolved photoemission spectroscopy(ARPES)with sub-micron spatial resolution,we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains.Unlike FeTe or FeSe,FeS remains identical tetragonal structure from room temperature down to 5 K,and the band structures observed can be well reproduced by our ab-initio calculations.Remarkably,mixed with the 1×1 tetragonal metallic phase,we also observe the coexistence of √5×√5 reconstructed insulating phase in the crystal,which not only helps explain the unusual properties of FeS,but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound. 展开更多
关键词 angle-resolved PHOTOEMISSION with spatially resolution scanning TUNNELING microscopy IRON-BASED SUPERCONDUCTOR electronic band structure
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Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS
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作者 洪光昊 王成玮 +15 位作者 姜娟 陈成 崔胜涛 杨海峰 梁爱基 刘帅 吕洋洋 周健 陈延彬 姚淑华 卢明辉 陈延峰 王美晓 杨乐仙 柳仲楷 陈宇林 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第1期197-202,共6页
Dirac semimetals are materials in which the conduction and the valence bands have robust crossing points protected by topology or symmetry. Recently, a new type of Dirac semimetals, so called the Dirac line-node semim... Dirac semimetals are materials in which the conduction and the valence bands have robust crossing points protected by topology or symmetry. Recently, a new type of Dirac semimetals, so called the Dirac line-node semimetals (DLNSs), have attracted a lot of attention, as they host robust Dirac points along the one-dimensional (1D) lines in the Brillouin zone (BZ). In this work, using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations, we systematically investigated the electronic structures of non-symmorphic ZrSiS crystal where we clearly distinguished the surface states from the bulk states. The photon-energy-dependent measurements further prove the existence of Dirac line node along the X-R direction. Remarkably, by in situ surface potassium doping, we clearly observed the different evolutions of the bulk and surface electronic states while proving the robustness of the Dirac line node. Our studies not only reveal the complete electronic structures of ZrSiS, but also demonstrate the method manipulating the electronic structure of the compound. 展开更多
关键词 Dirac line-node semimetal ZrSiS angle-resolved photoemission spectroscopy (ARPES) bulk andsurface states
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