Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-t...Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.展开更多
Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and tra...Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor （FET） structures with ferroelectric gate dielectric construction （termed FeFET）. One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET.展开更多
基金Supported by Scientific Research Fund of Hunan Provincial Education Department(14B041)the Natural Science Foundation of Hunan Province(2015JJ6024,14JJ6040)National Natural Science Foundation of China(51502087)
基金Supported by the National key research and development program during the“14th Five-Year Plan”(2021YFA1200700)Natural Science Foundation of China(62025405 and 61835012)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44000000)Science and Technology Commission of Shanghai Municipality(2151103500).
基金Supported by the National Natural Science Foundation of China(NSFC 62105100)the National Key research and development program in the 14th five year plan(2021YFA1200700)。
文摘Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.
基金Supported by the Major State Basic Research Development Program(2013CB922302)National Natural Science Foundation of China(11374320,11104301)Natural Science Foundation of Shanghai(13JC1406000,14JC1406500)
基金Project supported by the Major State Basic Research Development Program of China(Grant Nos.2013CB922302 and 2016YFA0203900)the Natural Science Foundation of China(Grant Nos.11322441,614404147,61574152,and 61674157)the Key Research Project of Frontier Science of Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC016 and QYZDB-SSW-JSC031)
文摘Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor （FET） structures with ferroelectric gate dielectric construction （termed FeFET）. One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET.
