The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High ...The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.展开更多
MTM(Metal To Metal)反熔丝薄膜工艺是反熔丝工艺的关键技术。介绍了MTM反熔丝薄膜单项工艺开发采用的DOE(Design of Experiment)试验方法。基于CVD(Chemical Vapor Deposition)工艺,通过对射频RF、气体1流量以及基座间距进行DOE试验设...MTM(Metal To Metal)反熔丝薄膜工艺是反熔丝工艺的关键技术。介绍了MTM反熔丝薄膜单项工艺开发采用的DOE(Design of Experiment)试验方法。基于CVD(Chemical Vapor Deposition)工艺,通过对射频RF、气体1流量以及基座间距进行DOE试验设计,以厚度均匀性、折射率以及应力等工艺参数响应并通过容宽验证,完成反熔丝薄膜主要参数的工艺菜单开发。主要提供一种采用DOE试验设计进行单项工艺开发的方法,为科研生产中各种关键单项工艺开发提供参考和借鉴。展开更多
基金Project supported by the Equipment Developing Advanced Research Program of China(Grant No.6140A24030107)。
文摘The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
文摘MTM(Metal To Metal)反熔丝薄膜工艺是反熔丝工艺的关键技术。介绍了MTM反熔丝薄膜单项工艺开发采用的DOE(Design of Experiment)试验方法。基于CVD(Chemical Vapor Deposition)工艺,通过对射频RF、气体1流量以及基座间距进行DOE试验设计,以厚度均匀性、折射率以及应力等工艺参数响应并通过容宽验证,完成反熔丝薄膜主要参数的工艺菜单开发。主要提供一种采用DOE试验设计进行单项工艺开发的方法,为科研生产中各种关键单项工艺开发提供参考和借鉴。